Electromigration behavior of dual-damascene Cu interconnects - Structure, width, and length dependences

Microelectronics Reliability

Volumn 44, Issue 5, 2004, Pages 747-754

  Vairagar, A V ^a,b   Mhaisalkar, S G ^a   Krishnamoorthy, Ahila ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BLEACHING; CHEMICAL MECHANICAL POLISHING; COPPER; DIFFUSION; ELECTROMIGRATION; GRADIENT METHODS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INTERMETALLICS;

COPPER INTERCONNECTS; DUAL DAMASCENE TEST STRUCTURES;

INTEGRATED CIRCUITS;

EID: 1842842332     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.12.011     Document Type: Article

References (20)

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