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Volumn 40, Issue 1, 2000, Pages 69-76

Surface electromigration in copper interconnects

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER; CRYSTAL MICROSTRUCTURE; ELECTROMIGRATION; GRAIN BOUNDARIES; INTERCONNECTION NETWORKS; MAGNETRON SPUTTERING; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS;

EID: 0033907970     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00091-8     Document Type: Article
Times cited : (47)

References (18)
  • 1
    • 0029327239 scopus 로고
    • Electromigration in copper conductors
    • Lloyd JR, Clement JJ. Electromigration in copper conductors. Thin Solid Films 1995;262:135-41.
    • (1995) Thin Solid Films , vol.262 , pp. 135-141
    • Lloyd, J.R.1    Clement, J.J.2
  • 2
    • 0032083909 scopus 로고    scopus 로고
    • Electromigration failure modes in damascene copper interconnects
    • Arnaud L, et al. Electromigration failure modes in damascene copper interconnects. Microelectron Reliab 1998;38:1029-34.
    • (1998) Microelectron Reliab , vol.38 , pp. 1029-1034
    • Arnaud, L.1
  • 4
    • 0001438054 scopus 로고    scopus 로고
    • On the unusual electromigration behavior of copper interconnects
    • Glickman E, Nathan M. On the unusual electromigration behavior of copper interconnects. J Appl Phys 1996;80:3782-91.
    • (1996) J Appl Phys , vol.80 , pp. 3782-3791
    • Glickman, E.1    Nathan, M.2
  • 5
    • 0342641478 scopus 로고    scopus 로고
    • A new insight into the electromigration behavior of copper interconnects: The roles of grain boundary and surface diffusion
    • Glickman EE, Nathan M. A new insight into the electromigration behavior of copper interconnects: the roles of grain boundary and surface diffusion. Defect and Diffusion Forum 1997;143-147:1673-8.
    • (1997) Defect and Diffusion Forum , vol.143-147 , pp. 1673-1678
    • Glickman, E.E.1    Nathan, M.2
  • 8
    • 0022874938 scopus 로고
    • A new electromigration testing technique for rapid statistical evaluation of interconnect technology
    • Thompson CV, Cho J. A new electromigration testing technique for rapid statistical evaluation of interconnect technology. IEEE Elect Dev Lett 1986;7:667-8.
    • (1986) IEEE Elect Dev Lett , vol.7 , pp. 667-668
    • Thompson, C.V.1    Cho, J.2
  • 9
    • 0029328170 scopus 로고
    • Encapsulated copper interconnection devices using side-wall barriers
    • Gardner DS, Onuki J, Kudoo K, Misawa Y, Vu QT. Encapsulated copper interconnection devices using side-wall barriers. Thin Solid Films 1995;262:104-19.
    • (1995) Thin Solid Films , vol.262 , pp. 104-119
    • Gardner, D.S.1    Onuki, J.2    Kudoo, K.3    Misawa, Y.4    Vu, Q.T.5
  • 10
    • 25944438622 scopus 로고
    • Electrical-resistivity model for polycrystalline films: The case of arbitrary reflection at external surfaces
    • May das AF, Shatzkes M. Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces. Physical Review B 1970;1:1382-9.
    • (1970) Physical Review B , vol.1 , pp. 1382-1389
    • Maydas, A.F.1    Shatzkes, M.2
  • 12
    • 0031251111 scopus 로고    scopus 로고
    • Nucleation and growth of Cu thin films on silicon wafers deposited by radio frequency sputtering
    • Lin JC, Lee C. Nucleation and growth of Cu thin films on silicon wafers deposited by radio frequency sputtering. Thin Solid Films 1997;307:96-9.
    • (1997) Thin Solid Films , vol.307 , pp. 96-99
    • Lin, J.C.1    Lee, C.2
  • 13
    • 11944275568 scopus 로고
    • Grain growth in thin films
    • Thompson CV. Grain growth in thin films. Annu Rev Mater Sci 1990;20:245-68.
    • (1990) Annu Rev Mater Sci , vol.20 , pp. 245-268
    • Thompson, C.V.1
  • 15
    • 0026186937 scopus 로고
    • Measurement of stress in copper films as a function of thermal history
    • Flinn PA. Measurement of stress in copper films as a function of thermal history. J Mater Res 1991;6:1498-501.
    • (1991) J Mater Res , vol.6 , pp. 1498-1501
    • Flinn, P.A.1
  • 16
    • 0029325728 scopus 로고
    • In-situ ultra-high vacuum studies of electromigration in copper films
    • Jo BH, Vook RW. In-situ ultra-high vacuum studies of electromigration in copper films. Thin Solid Films 1995;262:129-34.
    • (1995) Thin Solid Films , vol.262 , pp. 129-134
    • Jo, B.H.1    Vook, R.W.2
  • 18
    • 17344374069 scopus 로고    scopus 로고
    • Grain boundary electromigration in thin films: Interface reaction and segregation effects
    • Glickman EE. Grain boundary electromigration in thin films: interface reaction and segregation effects. Defect and Diffusion Forum 1998;156:147-60.
    • (1998) Defect and Diffusion Forum , vol.156 , pp. 147-160
    • Glickman, E.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.