Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis-dimethyl-amino titanium in the Cu/TiN/Si structure

Applied Physics Letters

Volumn 69, Issue 27, 1996, Pages 4182-4184

  Kim, Do Heyoung ^a   Cho, Sung Lae ^b   Kim, Ki Bum ^b   Kim, Jung Ju ^a   Park, Jin Won ^a   Kim, Jae Jung ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000423171     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116979     Document Type: Article

References (7)

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