메뉴 건너뛰기




Volumn 46, Issue 9-11, 2006, Pages 1652-1656

Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; METALLIZING; STRESS ANALYSIS;

EID: 33748088166     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.036     Document Type: Article
Times cited : (24)

References (12)
  • 1
    • 85023248653 scopus 로고    scopus 로고
    • Blech IA, Sello H. A study of failure mechanisms in silicon planar epitaxial transistors. In: Shilliday TS, Vaccaro J. editors. Physics of failure in Electronics. Rome Air Development Ctr., 5 (1966) 496-505.
  • 2
    • 0036892397 scopus 로고    scopus 로고
    • Electromigration reliability issues in dual-damascene Cu interconnects
    • Ogawa E.T., Lee K.-D., Blaschke V.A., and Ho P.S. Electromigration reliability issues in dual-damascene Cu interconnects. IEEE Trans Relia 51 (2002) 403
    • (2002) IEEE Trans Relia , vol.51 , pp. 403
    • Ogawa, E.T.1    Lee, K.-D.2    Blaschke, V.A.3    Ho, P.S.4
  • 3
    • 33644906605 scopus 로고    scopus 로고
    • Investigation of the effect of temperature and stress gradient on aceelerated EM test for Cu narrow interconnects
    • Tan C.M., and Roy A. Investigation of the effect of temperature and stress gradient on aceelerated EM test for Cu narrow interconnects. Thin Solid Films 504 (2006) 288
    • (2006) Thin Solid Films , vol.504 , pp. 288
    • Tan, C.M.1    Roy, A.2
  • 5
    • 11144245530 scopus 로고    scopus 로고
    • Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects
    • Tan C.M., Zhang G., and Gan Z.H. Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects. IEEE Tans Device and Materials Relia 4 (2004) 450
    • (2004) IEEE Tans Device and Materials Relia , vol.4 , pp. 450
    • Tan, C.M.1    Zhang, G.2    Gan, Z.H.3
  • 6
    • 0141569935 scopus 로고    scopus 로고
    • Temperature-dependent inelastic response of passivated copper films: Experiments, analyses, and implications
    • Shen Y.-L., and Ramamurty U. Temperature-dependent inelastic response of passivated copper films: Experiments, analyses, and implications. J Vacuum Sci Technol B 21 (2003) 1258
    • (2003) J Vacuum Sci Technol B , vol.21 , pp. 1258
    • Shen, Y.-L.1    Ramamurty, U.2
  • 7
    • 0037390977 scopus 로고    scopus 로고
    • Thermal stress characteristics of Cu/oxide and cu/low-K submicron interconnects structures
    • Rhee S.-H., Du Y., and Ho P.S. Thermal stress characteristics of Cu/oxide and cu/low-K submicron interconnects structures. J Appl Phys 93 (2003) 3926
    • (2003) J Appl Phys , vol.93 , pp. 3926
    • Rhee, S.-H.1    Du, Y.2    Ho, P.S.3
  • 8
    • 24144454672 scopus 로고    scopus 로고
    • Arijit Roy, Cher Ming Tan, R. Kumar, X.T. Chen, Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures, Microelectronics Relia 45 (2205) 1443.
  • 11
    • 33748091748 scopus 로고    scopus 로고
    • Gan D, Huang R, Ho PS, Leu J, Maiz J, Scherban T. Effects of passivation layer on stress relaxation and mass transport in electroplated Cu films. AIP Conf Proc of 7th Int. Workshop on Stress-Induced Phenomena 2004;256.
  • 12
    • 21044432880 scopus 로고    scopus 로고
    • Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements
    • Gan D., Ho P.S., Huang R., Leu J., Maiz J., and Scherban T. Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements. J Appl Phys 97 (2005) 103531
    • (2005) J Appl Phys , vol.97 , pp. 103531
    • Gan, D.1    Ho, P.S.2    Huang, R.3    Leu, J.4    Maiz, J.5    Scherban, T.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.