-
1
-
-
85023248653
-
-
Blech IA, Sello H. A study of failure mechanisms in silicon planar epitaxial transistors. In: Shilliday TS, Vaccaro J. editors. Physics of failure in Electronics. Rome Air Development Ctr., 5 (1966) 496-505.
-
-
-
-
2
-
-
0036892397
-
Electromigration reliability issues in dual-damascene Cu interconnects
-
Ogawa E.T., Lee K.-D., Blaschke V.A., and Ho P.S. Electromigration reliability issues in dual-damascene Cu interconnects. IEEE Trans Relia 51 (2002) 403
-
(2002)
IEEE Trans Relia
, vol.51
, pp. 403
-
-
Ogawa, E.T.1
Lee, K.-D.2
Blaschke, V.A.3
Ho, P.S.4
-
3
-
-
33644906605
-
Investigation of the effect of temperature and stress gradient on aceelerated EM test for Cu narrow interconnects
-
Tan C.M., and Roy A. Investigation of the effect of temperature and stress gradient on aceelerated EM test for Cu narrow interconnects. Thin Solid Films 504 (2006) 288
-
(2006)
Thin Solid Films
, vol.504
, pp. 288
-
-
Tan, C.M.1
Roy, A.2
-
4
-
-
23844523215
-
Current Crowding Effect on Copper Dual Damascene Via Bottom Failure for ULSI Applications
-
Tan C.M., Roy A., Vairagar A.V., Krishnamoorthy A., and Mhaisalkar S.G. Current Crowding Effect on Copper Dual Damascene Via Bottom Failure for ULSI Applications. IEEE Trans Device and Materials Relia 5 (2005) 198
-
(2005)
IEEE Trans Device and Materials Relia
, vol.5
, pp. 198
-
-
Tan, C.M.1
Roy, A.2
Vairagar, A.V.3
Krishnamoorthy, A.4
Mhaisalkar, S.G.5
-
5
-
-
11144245530
-
Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects
-
Tan C.M., Zhang G., and Gan Z.H. Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects. IEEE Tans Device and Materials Relia 4 (2004) 450
-
(2004)
IEEE Tans Device and Materials Relia
, vol.4
, pp. 450
-
-
Tan, C.M.1
Zhang, G.2
Gan, Z.H.3
-
6
-
-
0141569935
-
Temperature-dependent inelastic response of passivated copper films: Experiments, analyses, and implications
-
Shen Y.-L., and Ramamurty U. Temperature-dependent inelastic response of passivated copper films: Experiments, analyses, and implications. J Vacuum Sci Technol B 21 (2003) 1258
-
(2003)
J Vacuum Sci Technol B
, vol.21
, pp. 1258
-
-
Shen, Y.-L.1
Ramamurty, U.2
-
7
-
-
0037390977
-
Thermal stress characteristics of Cu/oxide and cu/low-K submicron interconnects structures
-
Rhee S.-H., Du Y., and Ho P.S. Thermal stress characteristics of Cu/oxide and cu/low-K submicron interconnects structures. J Appl Phys 93 (2003) 3926
-
(2003)
J Appl Phys
, vol.93
, pp. 3926
-
-
Rhee, S.-H.1
Du, Y.2
Ho, P.S.3
-
8
-
-
24144454672
-
-
Arijit Roy, Cher Ming Tan, R. Kumar, X.T. Chen, Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures, Microelectronics Relia 45 (2205) 1443.
-
-
-
-
10
-
-
78751524110
-
Stressinduced voiding under via connected to wide Cu metal leads
-
Ogawa E.T., McPherson J.W., Rosal J.A., Dickerson K.J., Chiu T.C., Tsung L.Y., et al. Stressinduced voiding under via connected to wide Cu metal leads. IEEE Int Relia Phys Symp (2002) 312
-
(2002)
IEEE Int Relia Phys Symp
, pp. 312
-
-
Ogawa, E.T.1
McPherson, J.W.2
Rosal, J.A.3
Dickerson, K.J.4
Chiu, T.C.5
Tsung, L.Y.6
-
11
-
-
33748091748
-
-
Gan D, Huang R, Ho PS, Leu J, Maiz J, Scherban T. Effects of passivation layer on stress relaxation and mass transport in electroplated Cu films. AIP Conf Proc of 7th Int. Workshop on Stress-Induced Phenomena 2004;256.
-
-
-
-
12
-
-
21044432880
-
Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements
-
Gan D., Ho P.S., Huang R., Leu J., Maiz J., and Scherban T. Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements. J Appl Phys 97 (2005) 103531
-
(2005)
J Appl Phys
, vol.97
, pp. 103531
-
-
Gan, D.1
Ho, P.S.2
Huang, R.3
Leu, J.4
Maiz, J.5
Scherban, T.6
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