Current crowding effect on copper dual damascene via bottom failure for ULSI applications

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 2, 2005, Pages 198-205

  Tan, Cher Ming ^a   Roy, Arijit ^a   Vairagar, A V ^b   Krishnamoorthy, Ahila ^c   Mhaisalkar, Subodh G ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Atomic flux divergence; Copper; Current crowding; Via electromigration

Indexed keywords

ATOMIC FLUX DIVERGENCE; BLACK'S EQUATION; CURRENT CROWDING; VIA ELECTROMIGRATION;

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTROMIGRATION; FAILURE (MECHANICAL); FINITE ELEMENT METHOD; MASS TRANSFER; RELIABILITY;

ULSI CIRCUITS;

EID: 23844523215     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.846830     Document Type: Conference Paper

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