Microstructure and electromigration in copper damascene lines

Microelectronics Reliability

Volumn 40, Issue 1, 2000, Pages 77-86

  Arnaud, Lucile ^a   Tartavel, G ^a   Berger, T ^b   Mariolle, D ^a   Gobil, Y ^a   Touet, I ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DIFFUSION IN SOLIDS; ELECTRIC LINES; ELECTROMIGRATION; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS;

COPPER DAMASCENE LINES; PHYSICAL VAPOR DEPOSITION (PVD);

INTERCONNECTION NETWORKS;

EID: 0033895732     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00209-7     Document Type: Article

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