A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects

Microelectronics Reliability

Volumn 46, Issue 8, 2006, Pages 1392-1395

  Yan, M Y ^a   Tu, K N ^a   Vairagar, A V ^b,c   Mhaisalkar, S G ^b   Krishnamoorthy, Ahila ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; DIFFUSION; ELECTROMIGRATION; GROWTH (MATERIALS); SILICON NITRIDE;

DRIFT VELOCITY; EDGE DEPLETION; INTERFACE DIFFUSION; VOID GROWTH;

INTERFACES (MATERIALS);

EID: 33746189599     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.11.004     Document Type: Article

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