Electromigration in copper damascene interconnects: Reservoir effects and failure analysis

Surface and Coatings Technology

Volumn 198, Issue 1-3 SPEC. ISS., 2005, Pages 257-261

  Shao, Wei ^a   Vairagar, A V ^a,b   Tung, Chih Hang ^a   Xie, Ze Liang ^a   Krishnamoorthy, Ahila ^b   Mhaisalkar, S G ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Cu Si3N4 interface; Damascene copper interconnects; Electromigration

Indexed keywords

COPPER; DIFFUSION; FAILURE ANALYSIS; INTERCONNECTION NETWORKS;

COPPER DAMASCENE INTERCONNECTS; ELECTROMIGRATION PATH; PACKAGE LEVEL ELECTROMIGRATION TESTS; RESERVOIR LENGTH;

ELECTROMIGRATION;

ELECTRICAL CONDUCTIVITY;

EID: 20744438951     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.10.090     Document Type: Article

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