Electromigration in damascene copper interconnects of line width down to 100 nm

Semiconductor Science and Technology

Volumn 21, Issue 9, 2006, Pages 1369-1372

  Roy, Arijit ^a,b   Kumar, Rakesh ^a,b   Tan, Cher Ming ^a   Wong, Terence K S ^a   Tung, C H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); MATHEMATICAL MODELS;

ATOMIC FLUX; CU/TA INTERFACE; DAMASCENE COPPER; DAMASCENE COPPER INTERCONNECTS;

COPPER;

EID: 33747307274     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/9/026     Document Type: Article

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