A study of SiN cap NH 3 plasma pre-treatment process on the PID, EM, GOI performance and BEOL defectivity in Cu dual damascene technology

2004 International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2004, Pages 119-122

  Ang, C H ^a   Lu, W H ^a   Yap, Andrew K L ^a   Goh, L C ^a   Goh, Luona N L ^a   Lim, Y K ^a   Chua, C S ^a   Ko, L H ^a   Tan, Tracy H S ^a   Toh, S L ^a   Hsia, L C ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DAMASCENE; DUAL GATE OXIDES; GATE OXIDE INTEGRITY (GOI); PLASMA-INDUCED DAMAGE (PID);

AMMONIA; CMOS INTEGRATED CIRCUITS; COPPER; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTROMIGRATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; PLASMAS;

SILICON COMPOUNDS;

EID: 4143101466     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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