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Volumn 80, Issue 7, 1996, Pages 3782-3791

On the unusual electromigration behavior of copper interconnects

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001438054     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363330     Document Type: Article
Times cited : (61)

References (51)
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    • The limits |a*| and |a**| are determined solely by μ, and for μ=1/6 are 2.0 and 7.7, respectively. For a values between |a*| and |**| both regimes can coexist, and the one which will dominate depends on the initial conditions (see Ref. 20)
    • The limits |a*| and |a**| are determined solely by μ, and for μ=1/6 are 2.0 and 7.7, respectively. For a values between |a*| and |**| both regimes can coexist, and the one which will dominate depends on the initial conditions (see Ref. 20).
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    • note
    • EM) might be underestimated: recent observations in Al show that the mass of residual material increases with j (Refs. 22, 23), and this should decrease the sheet resistance of the freshly exposed refractory underlayer.
  • 38
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    • note
    • The latter effect was studied recently with SEM/EDS in Al stripes (see Refs. 22, 23). The flux I in drift velocity experiments was varied either by changes in the stripe length, which alters the contribution from the stress-gradient driven back flux (see Ref. 16), or in the current density j. The "residual mass" of islands in the depleted region behind the drifting edge was found to continuously increase with I, and a transition from a truly homogeneous A-type electromigration displacement to the B-type, (with islands), was observed when the flux I was increased at a given temperature, composition and microstructure.
  • 49
    • 85033841984 scopus 로고    scopus 로고
    • Groove extension along a grain boundary nearly orthogonal to current direction was proposed to be an electromigration failure mechanism in bicrystalline Al lines by Longworth and Thompson (see Ref. 46)
    • Groove extension along a grain boundary nearly orthogonal to current direction was proposed to be an electromigration failure mechanism in bicrystalline Al lines by Longworth and Thompson (see Ref. 46).
  • 50
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    • Materials Reliability in Microelectronics II, edited by C. V. Thompson and J. R. Lloyd MRS, Pittsburgh, PA
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    • Longworth, H.P.1    Thompson, C.V.2


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