Three-dimensional voids simulation in chip metallization structures: A contribution to reliability evaluation

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1625-1630

  Dalleau, D ^a   Weide Zaage, K ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECTS; ELECTROMIGRATION; FINITE ELEMENT METHOD; INTEGRATED CIRCUITS; METALLIZING; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

THERMOMIGRATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035456975     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00151-2     Document Type: Article

References (10)

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4. X. Yu, K. Weide, M.R.S. Symposium, Boston, 1998
5. D. Dalleau, K. Weide, ADMET 2000, SanDiego, 2000
6. X. Yu, Ph.D. Thesis, Univ. of Hannover, 2000
7. Y.S. Touloukian, Thermophysical properties of Matter, vol. 1&2, Plenum Pub., 1970
8. F.R. Herbert, Private communications, Siemens
9. H, Wever, Elektro- und Thermotransport in Metallen, Berlin, 1972
10. J.R. Lloyd, Electromigration for designers, Private communications.