Electromigration resistance-related microstructural change with rapid thermal annealing of electroplated copper films

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 58-62

  Kwon, Dukryel ^a   Park, Hyunah ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

Electromigration; Electroplated copper; Grain size; Preferred orientation; Rapid thermal annealing (RTA)

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER; CURRENT DENSITY; ELECTROMIGRATION; ELECTROPLATING; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

ELECTROMIGRATION RESISTANCE; ELECTROPLATED COPPER; GRAIN SIZE; PREFERRED ORIENTATION;

METALLIC FILMS;

EID: 13444304113     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.08.039     Document Type: Conference Paper

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