Optimizing the electromigration performance of copper interconnects

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 119-121

  Besser, Paul ^a   Marathe, Amit ^a   Zhao, Larry ^a   Herrick, Matthew ^b   Capasso, Cristiano ^b   Kawasaki, Hisao ^b  

^a ADVANCED MICRO DEVICES   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; ELECTROMIGRATION; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); MOLECULAR ORIENTATION; THERMAL EFFECTS;

COPPER INTERCONNECTS;

ELECTRIC CONNECTORS;

EID: 0034452555     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904272     Document Type: Article

References (19)

1. Reliability and electromigration failure modes in dual inlaid Cu interconnects
2. Short course on reliability characterization methods for VLSI multilevel interconnects
3. Microstructural characterization of inlaid Cu inteconnect lines
4. Dependence of EM performance on linewidth for Cu inlaid structures