Correlation of electromigration defects in small damascene Cu interconnects with their microstructure

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 660-664

  Wendrock, Horst ^a   Mirpuri, Kabir ^a,c   Menzel, Siegfried ^a   Schindler, Günther ^b   Wetzig, Klaus ^a  

^a IFW DRESDEN   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c MCGILL UNIVERSITY   (Canada)

Author keywords

Copper interconnects; Electromigration; Grain boundaries; Microstructure

Indexed keywords

COPPER; GRAIN BOUNDARIES; MICROELECTRONICS; MICROSTRUCTURE; OPTICAL INTERCONNECTS; RELIABILITY; SCANNING ELECTRON MICROSCOPY;

COPPER INTERCONNECTS; INTERCONNECT MATERIALS; MICROELECTRONIC DEVICES;

ELECTROMIGRATION;

EID: 28044445431     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.077     Document Type: Conference Paper

References (7)

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