Overcoming intrinsic weakness of ULSI metallization electromigration performances

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 263-268

  Tan, C M ^a   Zhang, G ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Aluminum; Copper; Electromigration; Finite element analysis

Indexed keywords

DIFFUSIVITY; DRIFT VELOCITY; THERMAL CONDUCTORS; THERMALLY-INDUCED STRESS;

ACTIVATION ENERGY; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC CONDUCTORS; ELECTROMAGNETISM; FINITE ELEMENT METHOD; METALLIZING; TEMPERATURE DISTRIBUTION; THERMAL EXPANSION; THERMAL STRESS; ULSI CIRCUITS;

ELECTROMIGRATION;

EID: 4344564969     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.054     Document Type: Article

References (12)

1. Tu K.-N. J. Appl. Phys. 94:2003;5451.
2. Cahan R.W., Hassen P. Physical Metallurgy. 1983;North-Holland, NY, USA.
3. Fu K.-Y., Kawasaki H., Olowolafe J.O., Pyle R.E. SPIE Proc. Submicromimeter Metallization. 1805:1992;263.
4. Ames I., d'Heurle F.M., Horstmann R.E. IBM J. Res. Develop. 14:1970;461.
5. Hu C.K., Small M.B., Ho P.S. J. Appl. Phys. 74:1993;969.
6. Spolenak R., Kraft O., Arzt E. Microelectron. Reliab. 38:1998;1015.
7. Ogawa E.T., Lee K.-D., Blaschke V.A., Ho P.S. IEEE Trans. Reliab. 51:2002;403.
8. NASA technology readiness overview-reliability of advanced metallization systems-general reliability and radiation concerns, in website: http://nepp.nasa.gov/index_nasa.cfm/921/.
9. Lloyd J.R., Clements J., Snede R. Microelectron. Reliab. 39:1999;1595.
10. Zhang G., Tan C.M., Gan Z.-H., Prasad K., Zhang D.H. Mater. Res. Soc. Symp. Proc. 766:2003;139.
11. Dalleau D., Weide-Zaage K. Microelectron. Reliab. 41:2001;1625.
12. C.M. Tan, G. Zhang, Z.-H. Gan, "Dynamic study of the physical processes in the intrinsic line electromigration of deep submicron copper and aluminum interconnects" IEEE Trans. Device Mater. Reliab. Accepted for publication.