Barrier layer effects on reliabilities of copper metallization

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 288-291

  Yang, Z W ^a   Zhang, D H ^a   Li, C Y ^b   Tan, C M ^a   Prasad, K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Barrier layer; Copper metallization; Electromigration

Indexed keywords

BARRIER LAYER; COPPER METALLIZATION; IONIZED METAL PLASMA (IMP); SILICATE GLASS;

CHEMICAL MECHANICAL POLISHING; COPPER; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTROMIGRATION; ION BEAMS; SILICATES; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

METALLIZING;

EID: 4344645813     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.101     Document Type: Article

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