Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

Applied Physics Letters

Volumn 79, Issue 27, 2001, Pages 4592-4594

  Gan, C L ^a   Thompson, C V ^b   Pey, K L ^c   Choi, W K ^c   Tay, H L ^d   Yu, B ^d   Radhakrishnan, M K ^d  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035981074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1428410     Document Type: Article

References (11)

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