Energy-enhanced atomic layer deposition for more process and precursor versatility

Coordination Chemistry Reviews

Volumn 257, Issue 23-24, 2013, Pages 3254-3270

  Potts, S E ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

3c2e; iPr; tBu; ALD; Atomic layer deposition; BDEAS; CCP; Cp; CpMe; Cpx; DFT; DMAI; Eads; Energy enhanced ALD; Et; FT IR; GPC; ICP; MBE; Me; Ozone based ALD; Plasma enhanced ALD; Precursors; RF; RT; RT ALD; RTP; S OH; Thd; Ti N Prime; Ti Prime; Ti Star; TMA; TTIP

Indexed keywords

EID: 84885482308     PISSN: 00108545     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ccr.2013.06.015     Document Type: Review

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