Stable ZnO thin film transistors by fast open air atomic layer deposition

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Levy, David H ^a   Freeman, Diane ^a   Nelson, Shelby F ^a   Cowdery Corvan, Peter J ^a   Irving, Lyn M ^a  

^a EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC LAYER DEPOSITION; PASSIVATION; THRESHOLD VOLTAGE; VOLTAGE CONTROL; ZINC OXIDE;

BOTTOM GATE GEOMETRY; GATE BIAS STRESS; TURN-ON VOLTAGE;

THIN FILM TRANSISTORS;

EID: 44049087683     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2924768     Document Type: Article

References (18)

1. P. Görrn, M. Sander, J. Meyer, M. Kröger, E. Becker, H.-H. Johannes, W. Kowalsky, and T. Riedl, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200501957 18, 738 (2006).
2. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1542677 82, 733 (2003).
3. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goņalves, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1790587 85, 2541 (2004).
4. Y. J. Li, Y. W. Kwon, M. Jones, Y. W. Heo, J. Zhou, S. C. Luo, P. H. Holloway, E. Douglas, D. P. Norton, Z. Park, and S. Li, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/20/8/012 20, 720 (2005).
5. D. Levy, L. Irving, and A. Childs, SID Int. Symp. Digest Tech. Papers DTPSDS 0003-966X 10.1889/1.2785271 38, 230 (2007).
6. B. J. Norris, J. Anderson, J. F. Wager, and D. A. Keszler, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/36/20/L02 36, L105 (2003).
7. E. H. Kim, C. Y. Kim, D. H. Lee, B. H. Chung, J. H. Jeon, H. S. Kim, J. W. Hyun, Y. Kim, and S. J. Noh, MRS Proceedings, Fall, 2006 (unpublished).
8. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836 10.1038/nature03090 432, 488 (2004).
9. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1843286 86, 013503 (2004).
10. H.-N. Lee, J. Kyung, S. K. Kang, D. Y. Kim, M.-C. Sung, S.-J. Kim, C. N. Kim, H. G. Kim, and S.-T. Kim, SID Int. Symp. Digest Tech. Papers DTPSDS 0003-966X 10.1889/1.2785691 38, 1826 (2007).
11. A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(96)08934-1 292, 135 (1997).
12. M. D. Groner, J. W. Elam, F. H. Fabreguette, and S. M. George, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(02)00438-8 413, 186 (2002).
13. P. F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2188379 88, 123509 (2006).
14. This is not always the case for ALD ZnO. See S. J. Lim, S.-J. Kwon, H. Kim, and J.-S. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2803219 91, 183517 (2007).
15. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doan, V. Avrutin, S.-J. Cho, and H. Morko̧, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1992666 98, 041301 (2005).
16. J. Sun, D. A. Mourey, D. Zhao, S. K. Park, S. F. Nelson, D. H. Levy, D. Freeman, P. Cowdery-Corvan, L. Tutt, and T. N. Jackson, " ZnO thin film transistor ring oscillators with 31 nsec propagation delay.," IEEE Electron Device Lett. (in press).
17. P. Görrn, P. Hölzer, T. Riedl, W. Kowalski, J. Wang, T. Weimann, P. Hinze, and S. Kipp, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2458457 90, 063502 (2007).
18. A. Suresh and J. F. Muth, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2824758 92, 033502 (2008).