Silicide-induced multi-wall carbon nanotube growth on silicon nanowires

Nanotechnology

Volumn 22, Issue 8, 2011, Pages

  Lee, J H ^a   Lund, I N ^a   Eisenbraun, E T ^a   Geer, R E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALD PRECURSOR; CARBON CONCENTRATIONS; CARBON FEEDSTOCK; CARBON INCORPORATION; CATALYTIC DECOMPOSITION; COMMONLY USED; GASEOUS HYDROCARBON; GROWTH MODES; GROWTH PROCESS; HIGH-TEMPERATURE PYROLYSIS; METALLOCENES; MULTI-WALL CARBON NANOTUBES; NI CATALYSTS; NI FILMS; NICKEL CATALYST; NICKEL SILICIDE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POST-DEPOSITION; SI SUBSTRATES; SI WAFER; SILICIDATION; SILICON NANOWIRES; SILICON WAFER SUBSTRATES; VAPOR PHASE;

ATOMIC LAYER DEPOSITION; CARBON FILMS; CATALYSTS; FILM GROWTH; HYDROCARBONS; NANOWIRES; ORGANOMETALLICS; PLASMA DEPOSITION; PRECIPITATION (CHEMICAL); PYROLYSIS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; SILICON OXIDES; SILICON WAFERS; SUBSTRATES; WALLS (STRUCTURAL PARTITIONS);

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 79251592862     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/8/085603     Document Type: Article

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