Evaluation of high thermal stability cyclopentadienyl Hf precursors with H 2O as a co-reactant for advanced gate logic applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

  Consiglio, Steven ^a   Clark, Robert D ^a   Nakamura, Genji ^a   Wajda, Cory S ^a   Leusink, Gert J ^a  

^a TEL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLOPENTADIENYLS; DEVICE TESTING; EQUIVALENT OXIDE THICKNESS; GROWTH PER CYCLE; HIGH THERMAL STABILITY; LIQUID PRECURSORS; LOGIC APPLICATIONS; MIXED-LIGANDS; PROCESSING TEMPERATURE; TEMPERATURE LIMITS; TEMPERATURE RANGE; TETRAKIS;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM; LIGANDS; OPTIMIZATION; ORGANOMETALLICS; PROCESSING; TEMPERATURE; THERMODYNAMIC STABILITY; VAPOR DEPOSITION;

FILM GROWTH;

EID: 84855608379     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3664106     Document Type: Article

References (19)

1. D. G. Schlom, S. Guha, and S. Datta, Mater. Res. Bull. 33, 1017 (2008). 10.1557/mrs2008.221
2. R. D. Clark, C. S. Wajda, G. J. Leusink, L. F. Edge, J. Faltermeier, P. Jamison, B. P. Linder, M. Copel, V. Narayanan, M. Gribelyuk, R. Loesing, and R. Murphy, ECS Trans. 11, 55 (2007). 10.1149/1.2778650
3. X. Lui, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang, and R. G. Gordon, J. Electrochem. Soc. 152, G213 (2005). 10.1149/1.1859631 (Pubitemid 40407354)
4. J. Swerts, N. Peys, L. Nyns, A. Delabie, A. Franquet, J. W. Maes, S. Van Elshocht, and S. De Gendt, J. Electrochem. Soc. 157, G6 (2010).
5. J.-M. Girard, N. Blasco, C. Dussarrat, and N. Kemeling, EuroAsia Semicon. 25 (December 2007, January 2008), http://www.euroasiasemiconductor.com/archive.
6. S. Rushworth, K. Coward, H. Davies, P. Heys, T. Leese, L. Kempster, R. Odedra, F. Song, and P. Williams, Surf. Coat. Technol. 201, 9060 (2007). 10.1016/j.surfcoat.2007.04.050 (Pubitemid 47209391)
7. H. Jagannathan, L. F. Edge, P. Jamison, R. Iijima, V. Narayanan, V. K. Paruchuri, R. D. Clark, S. Consiglio, C. S. Wajda, and G. J. Leusink, ECS Trans. 19, 253 (2009). 10.1149/1.3118951
8. J. Niinistö, M. Mäntymäki, K. Kukli, L. Costelle, E. Puukilainen, M. Ritala, and M. Leskelä, J. Cryst. Growth 312, 245 (2010). 10.1016/j.jcrysgro.2009.10.028
9. J. Niinistö, M. Putkonen, L. Niinistö, F. Song, P. Williams, P. N. Heys, and R. Odedra, Chem. Mater. 19, 3319 (2007). 10.1021/cm0626583 (Pubitemid 47160038)
10. P. Fischer, D. Pierreux, O. Rouault, J. Sirugue, P. Zagwijn, E. Tois, and S. Haukka, ECS Trans. 16, 135 (2008). 10.1149/1.2979988
11. C. L. Dezelah, I. V. J. Niinistö, K. Kukli, F. Munnik, J. Lu, M. Ritala, M. Leskelä, and L. Niinistö, Chem. Vap. Deposition 14, 358 (2008). 10.1002/cvde.200806716
12. M. Suzuki, T. Magara, T. Takahashi, and H. Shinriki, ALD 2002 Topical Conference, Seoul, Korea, 19-21 August 2002 (unpublished).
13. R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink, T. Sugawara, H. Nakabayashi, H. Jagannathan, L. F. Edge, P. Jamison, V. K. Paruchuri, R. Iijima, M. Takayanagi, B. P. Linder, J. Bruley, M. Copel, and V. Narayanan, ECS Trans. 16, 291 (2008). 10.1149/1.2980004
14. H. Jagannathan, R. D. Clark, S. Consiglio, P. Jamison, B. P. Linder, M. Hopstaken, G. J. Leusink, V. K. Paruchuri, and V. Narayanan, ECS Trans. 33, 157 (2010). 10.1149/1.3481602
15. R. D. Clark, S. Aoyama, S. Consiglio, G. Nakamura, and G. J. Leusink, ECS Trans. 35, 815 (2011). 10.1149/1.3572321
16. J. R. Hauser and K. Ahmed, AIP Conf. Proc. 449, 235 (1998).
17. S. Consiglio, R. D. Clark, C. S. Wajda, M. Igeta, G. J. Leusink, T. Sugawara, and H. Nakabayashi, ECS Trans. 13, 89 (2008). 10.1149/1.2911488
18. J. W. Elam, M. J. Pellin, S. D. Elliott, A. Zydor, M. C. Faia, and J. T. Hupp, Appl. Phys. Lett. 91, 253123 (2007). 10.1063/1.2824814
19. K. Knapas and M. Ritala, Chem. Mater. 20, 5698 (2008). 10.1021/cm800460b