Molecular design of improved precursors for the MOCVD of oxides used in microelectronics

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9046-9054

  Jones, Anthony C ^a,b   Aspinall, Helen C ^a   Chalker, Paul R ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b Epichem Ltd   (United Kingdom)

Author keywords

Dielectric oxides; Ferroelectric oxides; MOCVD; Thin films

Indexed keywords

DIELECTRIC FILMS; FERROELECTRIC FILMS; MICROELECTRONICS; MOLECULAR STRUCTURE; OXIDE FILMS; THIN FILMS;

DIELECTRIC OXIDES; FERROELECTRIC OXIDES; MOLECULAR DESIGN;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

DIELECTRIC FILMS; FERROELECTRIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; MOLECULAR STRUCTURE; OXIDE FILMS; THIN FILMS;

EID: 34547678603     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.118     Document Type: Article

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