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Japanese Journal of Applied Physics

Volumn 51, Issue 5 PART 2, 2012, Pages

Atomic layer deposited Co(W) film as a single-layered barrier/liner for next-generation Cu-interconnects

(4) Shimizu, Hideharu a,b Sakoda, Kaoru a Momose, Takeshi b Shimogaki, Yukihiro b

a TAIYO NIPPON SANSO CORPORATION (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS-LIKE; ATOMIC LAYER DEPOSITED; BARRIER PROPERTIES; COBALT FILM; CU DIFFUSION; CU-INTERCONNECTS; CYCLOPENTADIENYLS; HIGH ACTIVATION ENERGY; HOT FILAMENT; INTERSTITIAL DIFFUSION;

ADHESION; ATOMIC LAYER DEPOSITION; COPPER; DIFFUSION BARRIERS; GAS PERMEABLE MEMBRANES; OXYGEN; SELF ASSEMBLY; TANTALUM COMPOUNDS; TUNGSTEN;

COBALT;

EID: 84861517708 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.05EB02 Document Type: Conference Paper

Times cited : (39)

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