On the dissociative chemisorption of tris(dimethylamino)silane on hydroxylated sio2(001) surface

Journal of Physical Chemistry C

Volumn 113, Issue 22, 2009, Pages 9731-9736

  Li, Jiaye ^a   Wu, Jinping ^a   Wu, Chenggang Zhou ^a   Han, Bing ^b   Karwacki, Eugene J ^b   Xiao, Manchao ^b   Lei, Xinjian ^b   Cheng, Hansong ^b  

^a CHINA UNIVERSITY OF GEOSCIENCES   (China)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; ATOMIC LAYER; DISSOCIATIVE CHEMISORPTION; FIRST-PRINCIPLES; LOW DENSITY; REACTION PROCESS; SEQUENTIAL DISSOCIATION; SURFACE SPECIES; THEORETICAL STUDY;

ACTIVATION ENERGY; CHEMISORPTION; DISSOCIATION; HYDROXYLATION; SILANES;

SURFACE REACTIONS;

EID: 67149131707     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp900119b     Document Type: Article

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