Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Thin Solid Films

Volumn 519, Issue 1, 2010, Pages 362-366

  Kim, Woo Hee ^a,b   Maeng, W J ^b   Moon, Kyeong Ju ^a   Myoung, Jae Min ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Electrical properties; Growth characteristics; High k gate dielectric; La(iPrCp)3; La2O3; PE ALD; T ALD

Indexed keywords

ELECTRICAL PROPERTY; GROWTH CHARACTERISTIC; HIGH-K GATE DIELECTRICS; LA(IPRCP)3; LA2O3; PE-ALD; T-ALD;

ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); MICROELECTRONICS; PLASMA DEPOSITION;

ELECTRIC PROPERTIES;

EID: 77957706011     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.108     Document Type: Article

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