Investigation of silicon oxide thin films prepared by atomic layer deposition using SiH2Cl2 and O3 as the precursors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 A, 2004, Pages

  Lee, Joo Hyeon ^a   Kim, Un Jung ^b   Han, Chang Hee ^c   Rha, Sa Kyun ^c   Lee, Won Jun ^b   Park, Chong Ook ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Sejong University   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

Atomic layer deposition (ALD); Dichlorosilane (SiH2Cl2); Ozone (O3); Silicon oxide (SiO2)

Indexed keywords

ATMOSPHERIC PRESSURE; DEPOSITION; DIFFUSION; DYNAMIC RANDOM ACCESS STORAGE; GROWTH KINETICS; INTEGRATED CIRCUITS; LITHOGRAPHY; MATERIALS SCIENCE; OZONE; STOICHIOMETRY; SURFACE REACTIONS; SURFACE ROUGHNESS; THIN FILMS;

ATOMIC LAYER DEPOSITION (ALD); DICHLOROSILANE (SIH2CL2); OZONE (O3); SILICON OXIDE (SIO2);

SILICA;

EID: 2442608847     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l328     Document Type: Article

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