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Volumn 33, Issue 2, 2010, Pages 91-99
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New mechanisms for ozone-based ALD growth of high-k dielectrics via nitrogen-oxygen species
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Author keywords
[No Author keywords available]
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Indexed keywords
DIELECTRIC MATERIALS;
FLOW OF GASES;
GAS PERMEABLE MEMBRANES;
GROWTH RATE;
HAFNIUM OXIDES;
HIGH-K DIELECTRIC;
NITROGEN;
OZONE;
ALD GROWTH;
CROSS FLOWS;
DIELECTRIC BARRIER DISCHARGES;
FEED GAS FLOW;
FTIR SPECTROMETRY;
NEW MECHANISMS;
OXYGEN SPECIES;
THERMAL ALD;
ATOMIC LAYER DEPOSITION;
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EID: 79952563313
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.3485245 Document Type: Conference Paper |
Times cited : (7)
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References (7)
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