Extremely low temperature growth of ZnO by atomic layer deposition

Journal of Applied Physics

Volumn 103, Issue 3, 2008, Pages

  Guziewicz, E ^a   Kowalik, I A ^a   Godlewski, M ^a,c   Kopalko, K ^a   Osinniy, V ^a   Wojcik A ^a   Yatsunenko, S ^a   Lusakowska E ^a   Paszkowicz, W ^a   Guziewicz, M ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; PHOTOLUMINESCENCE; THIN FILMS;

EXCITONIC PHOTOLUMINESCENCE; TEMPERATURE GROWTH; WATER PRECURSORS;

ZINC OXIDE;

EID: 39349109075     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2836819     Document Type: Article

References (31)

1. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Superlattices Microstruct. SUMIEK 0749-6036 10.1016/S0749-6036(03)00093-4 34, 3 (2003).
2. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Dogan, V. Avrutin, S. -J. Cho, and H. Morkoc, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1992666 98, 041301 (2005).
3. D. C. Reynolds, D. C. Look, and B. Jogai, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(96)00340-7 99, 873 (1996).
4. M. Wraback, H. Shen, S. Liang, C. R. Gorla, and Y. Lu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124223 74, 507 (1999).
5. D. C. Look, D. C. Reynolds, J. W. Hemsky, R. L. Jones, and J. R. Sizelove, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124521 75, 811 (1999).
6. C. G. Van der Walle and R. A. Street, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.10615 51, 10615 (1995).
7. Polyethylene terephthalate (Mylar) properties can be found at www.dupontteijinfilms.com.
8. Z. Bao, A. J. Lovinger, and J. Brown, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja9727629 120, 207 (1998).
9. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncaives, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1790587 85, 2541 (2004).
10. S. Masuda, K. Kitamura, Y. Okumura, and S. Miyatake, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1534627 93, 1624 (2003).
11. J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2204574 88, 212903 (2006).
12. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1553997 82, 1117 (2003).
13. L. -Y. Chen, W. -H. Chen, J. -J. Wang, F. C.-N. Hong, and Y. -K. Su, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1835991 85, 5628 (2004).
14. H. -H. Hsieh and C. -C. Wu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2235895 89, 041109 (2006).
15. J. Lim and C. Lee, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2006. 09.007 515, 3335 (2007).
16. J. Lim, K. Shin, H. W. Kim, and C. Lee, J. Lumin. JLUMA8 0022-2313 10.1016/j.jlumin.2004.02.006 109, 181 (2004).
17. S. K. Kim, C. S. Hwang, S. -H. K. Park, and S. J. Yun, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.10.015 478, 103 (2005).
18. A. Wójcik, K. Kopalko, M. Godlewski, E. Guziewicz, R. Jakiea, R. Minikayev, and W. Paszkowicz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2245209 89, 051907 (2006).
19. A. Wójcik, M. Godlewski, E. Guziewicz, K. Kopalko, R. Jakiea, M. Kiecana, M. Sawicki, M. Guziewicz, M. Putkonen, L. Niinistö, Y. Dumont, and N. Keller, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2591281 90, 082502 (2007).
20. Ü. Özgür and H. Markoc, in Zinc Oxide Bulk, Thin Films and Nanostructures, Processing, Properties and Applications, edited by, C. Jagadish, and, S. Pearton, (Elsevier, New York, 2006).
21. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116699 68, 403 (1996).
22. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.362349 79, 7983 (1996).
23. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, J. Caruso, M. J. Hampden-Smith, and T. T. Kodas, J. Lumin. JLUMA8 0022-2313 10.1016/S0022-2313(96)00096-8 75, 11 (1997).
24. S. A. Studenikin, N. Golego, and M. Cocivera, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368295 84, 2287 (1998).
25. F. H. Leiter, H. R. Alves, A. Hofstaetter, D. M. Hoffmann, and B. K. Meyer, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/1521-3951(200107)226: 1
26. F. H. Leiter, H. R. Alves, N. G. Romanov, D. M. Hoffmann, and B. K. Meyer, Physica B (Amsterdam) 340-342, 201 (2003). 0921-4526
27. A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.15019 61, 15019 (2000).
28. X. Yang, G. Du, X. Wang, J. Wang, B. Liu, Y. Zhang, D. Liu, H. C. Ong, and S. Yang, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(03)00898-4 252, 275 (2003).
29. B. Guo, Z. R. Qiu, and K. S. Wong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1566482 82, 2290 (2003).
30. H. J. Egelhaaf and D. Oelkrug, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(95)00634-6 161, 190 (1996).
31. J. Lim and C. Lee, Thin Solid Films 515, 33305 (2007).