Atomic layer deposition of antimony and its compounds using dechlorosilylation reactions of tris(triethylsilyl)antimony

Chemistry of Materials

Volumn 23, Issue 2, 2011, Pages 247-254

  Pore, Viljami ^a,b   Knapas, Kjell ^a   Hatanpää, Timo ^a   Sarnet, Tiina ^a   Kemell, Marianna ^a   Ritala, Mikko ^a   Leskelä, Markku ^a   Mizohata, Kenichiro ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DEHALOSILYLATION REACTION; GROWING SURFACES; GROWTH CYCLE; III-V COMPOUNDS; IN-SITU REACTIONS; LOW GROWTH TEMPERATURE; NON-VOLATILE; PHASE CHANGE RANDOM ACCESS MEMORY;

ANTIMONY; ATOMIC LAYER DEPOSITION; METAL HALIDES; RANDOM ACCESS STORAGE; TELLURIUM COMPOUNDS;

ANTIMONY COMPOUNDS;

EID: 78751517370     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm102904f     Document Type: Article

References (47)

1. Leskelä, M.; Ritala, M. Thin Solid Films 2002, 409, 138
2. Ritala, M.; Leskelä, M. Handbook of Thin Film Materials; Nalwa, H. S., Ed.; Academic Press: San Diego, CA, 2002; Vol. 1, pp 103 - 159.
3. Ritala, M.; Niinistö, J. Chemical Vapour Deposition: Precursors, Processes and Applications; Jones, A. C.; Hitchman, M. L., Eds.; Royal Society of Chemistry: Cambridge, U.K., 2009; Chapter 4, pp 158 - 206.
4. Ritala, M.; Niinistö, J. ECS Trans. 2009, 25, 641
5. Knez, M.; Nielsch, K.; Niinistö, L. Adv. Mater. 2007, 19, 3425
6. Rossnagel, S. M.; Sherman, A.; Turner, F. J. Vac. Sci. Technol. B 2000, 18, 2016
7. Lee, Y. J.; Kang, S.-W. J. Vac. Sci. Technol. A 2002, 20, 1983
8. Aaltonen, T.; Alén, P.; Ritala, M.; Leskelä, M. Chem. Vap. Deposition 2003, 9, 45
9. Aaltonen, T.; Ritala, M.; Sajavaara, T.; Keinonen, J.; Leskelä, M. Chem. Mater. 2003, 15, 1924
10. Aaltonen, T.; Ritala, M.; Sammelselg, V.; Leskelä, M. J. Electrochem. Soc. 2004, 151, G489
11. Klaus, J. W.; Ferro, S. J.; George, S. M. Thin Solid Films 2000, 360, 145
12. Lim, B. S.; Rahtu, A.; Gordon, R. G. Nat. Mater. 2003, 2, 749
13. Pore, V.; Hatanpää, T.; Ritala, M.; Leskelä, M. J. Am. Chem. Soc. 2009, 131, 3478
14. Carmalt, C. J.; Steed, J. W. Polyhedron 2000, 19, 1639
15. von Hänisch, C. Z. Anorg. Allg. Chem. 2001, 627, 1414
16. Evans, C. M.; Castro, S. L.; Worman, J. J.; Raffaelle, R. P. Chem. Mater. 2008, 20, 5727
17. Suntola, T. Thin Solid Films 1992, 216, 84
18. Rahtu, A.; Ritala, M. Electrochem. Soc. Proc. 2000, 2000 - 13, 105
19. Waldo, R. A. Microbeam Analysis: An Iteration Procedure to Calculate Film Compositions and Thicknesses in Electron-Probe Microanalysis; San Francisco Press: San Francisco, CA, 1988; Vol. 23, pp 310 - 314.
20. Jokinen, J.; Keinonen, J.; Tikkanen, P.; Kuronen, A.; Ahlgren, T.; Nordlund, K. Nucl. Instrum. Meth. B 1996, 119, 533
21. Greenwood, N. N.; Earnshaw, A. Chemistry of the Elements, 2 nd ed.; Butterworth-Heinemann: Oxford, 1998; pp 547 - 596.
22. Opekun, A. R.; Smith, J. L.; Graham, Y. Dig. Dis. Sci. 1990, 35, 950
23. Tominaga, J.; Nakano, T.; Atoda, N. Appl. Phys. Lett. 1998, 73, 2078
24. There is a slight discrepancy between Figures 1 a and 1 b, 1 c. The saturated growth rate in Figure 1 a is 0.45/cycle whereas a growth rate of 0.61 cycle is seen in Figures 1 b and 1 c at almost the same temperature. The reason for this difference is the high temperature dependence of the growth rate at the low temperature region (Figure 1 c). We used different ALD reactors for the data in Figure 1 a and Figures 1 b,c. Small variations in the actual reactor temperatures are most likely responsible for these differences in the growth rates.
25. International Centre for Diffraction Data (ICDD), Card 35 - 0732.
26. Bae, C.; Yoo, H.; Kim, S.; Lee, K.; Kim, J.; Sung, M. M.; Shin, H. Chem. Mater. 2008, 20, 756
27. Knapas, K.; Hatanpää, T.; Ritala, M.; Leskelä, M. Chem. Mater. 2010, 22, 1386
28. Ovshinsky, S. R. Phys. Rev. Lett. 1968, 21, 1450
29. Welnic, W.; Wuttig, M. Mater. Today 2008, 11, 20
30. Atwood, G. Science 2008, 321, 210
31. Lacaita, A. L. Solid-State Electron. 2006, 50, 24
32. Yamada, N.; Ohno, E.; Nishiuchi, K.; Akahira, N. J. Appl. Phys. 1991, 69, 2849
33. Matsunga, T.; Umetani, Y.; Yamada, N. Phys. Rev. B 2001, 64, 184116
34. Raoux, S.; Cabral, C.; Krusin-Elbaum, L.; Jordan-Sweet, J. L.; Virwani, K.; Hitzbleck, M.; Salinga, M.; Madan, A.; Pinto, T. L. J. Appl. Phys. 2009, 105, 064918
35. International Centre for Diffraction Data (ICDD), Card 04 - 0545.
36. Dutta, P. S.; Bhat, H. L.; Kumar, V. J. Appl. Phys. 1997, 81, 5821
37. Dupuis, D. R. Science 1984, 226, 623
38. International Centre for Diffraction Data (ICDD), Card 06 - 0233.
39. Wells, R. L.; Pitt, C. G.; McPhail, A. T.; Purdy, A. P.; Shafieezad, S.; Hallock, R. B. Chem. Mater. 1989, 1, 4
40. Micic, O. I.; Curtis, C. J.; Jones, K. M.; Sprague, J. R.; Nozik, A. J. J. Phys. Chem. 1994, 98, 4966
41. Cao, Y.; Banin, U. J. Am. Chem. Soc. 2000, 122, 9692
42. Martin, M. J.; Qiang, G.-H.; Schleich, D. M. Inorg. Chem. 1988, 27, 2804
43. Ozeki, M. Mater. Sci. Rep. 1992, 8, 97
44. Usui, A. Proc. IEEE 1992, 80, 1641
45. Chen, Q.; Beyler, C. A.; Dapkus, P. D.; Alwan, J. J.; Coleman, J. J. Appl. Phys. Lett. 1992, 60, 2418
46. Arès, R.; Watkins, S. P.; Yeo, P.; Horley, G. A.; O'Brien, P.; Jones, A. C. J. Appl. Phys. 1998, 83, 3390
47. Pandian, R.; Kooi, B. J.; Oosthoek, J. L. M.; van den Dool, P.; Palasantzas, G.; Pauza, A. Appl. Phys. Lett. 2009, 95, 252109