Low temperature (<100°C) deposition of aluminum oxide thin films by ALD with O3as oxidant

Journal of the Electrochemical Society

Volumn 153, Issue 5, 2006, Pages

  Kim, Seong Keun ^a   Lee, Suk Woo ^a   Hwang, Cheol Seong ^a   Min, Yo Sep ^b   Won, Jeong Yeon ^b   Jeong, Jaehack ^c  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Ever tek Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DEPOSITION; FILM GROWTH; LEAKAGE CURRENTS; PERMITTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); BANDGAP ENERGY; FLEXIBLE SUBSTRATES; OXIDANT;

THIN FILMS;

EID: 33645719096     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2177047     Document Type: Article

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