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Volumn 30, Issue 2, 2012, Pages

Plasma-enhanced and thermal atomic layer deposition of Al 2O 3 using dimethylaluminum isopropoxide, [Al(CH 3) 2(μ-O iPr)] 2, as an alternative aluminum precursor

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM PRECURSORS; C INCORPORATION; DEPOSITION TEMPERATURES; FILM COMPOSITION; FILM PROPERTIES; GROWTH PER CYCLE; H-CONTENT; IN-SITU; ISO-PROPOXIDE; MASS DENSITIES; P-TYPE SI; QUADRUPOLE MASS SPECTROMETRY; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SURFACE RECOMBINATION VELOCITIES; TEMPERATURE RANGE; THERMAL ALD; THERMAL PROCESS;

EID: 84858023603     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3683057     Document Type: Article
Times cited : (71)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.