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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 5, 2011, Pages

Impact of parasitic reactions on wafer-scale uniformity in water-based and ozone-based atomic layer deposition

(4) Henn Lecordier, Laurent a Anderle, Mariano b Robertson, Erin a Rubloff, Gary W a

a UNIVERSITY OF MARYLAND (United States)

b FONDAZIONE BRUNO KESSLER (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SITE; CONFORMALITY; CROSS FLOWS; ENHANCED GROWTH; FLOW DIRECTION; GROWTH PER CYCLE; HALF-REACTIONS; NON-UNIFORMITIES; PARAMETER SPACES; PARASITIC REACTION; PROCESS BENEFITS; PROCESS WINDOW; REACTOR DESIGNS; SURFACE CHEMICALS; TRIMETHYL ALUMINUMS; WAFER SCALE; WAFER SURFACE; WATER BASED; WATER-BASED PROCESS;

ADSORPTION; ATOMIC LAYER DEPOSITION; FILM GROWTH; MICROELECTRONICS; OXIDANTS; OZONE; WAFER BONDING;

OZONE LAYER;

EID: 80052415917 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3620421 Document Type: Article

Times cited : (25)

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