Ion and photon surface interaction during remote plasma ALD of metal oxides

Journal of the Electrochemical Society

Volumn 158, Issue 4, 2011, Pages

  Profijt, H B ^a   Kudlacek, P ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; GAS PRESSURES; METAL OXIDE FILM; METAL OXIDE THIN FILMS; METAL OXIDES; PLASMA POWER; REMOTE PLASMAS; SUBSTRATE SURFACE; SURFACE INTERACTIONS; VACUUM ULTRAVIOLETS;

ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRONIC STRUCTURE; IONS; METALLIC COMPOUNDS; PHOTONS; PLASMA DEPOSITION; PLASMAS; SURFACE REACTIONS;

OXIDE FILMS;

EID: 79955161148     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3552663     Document Type: Article

References (17)

1. S. B. S. Heil, E. Langereis, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc., 153, G956 (2006).
2. W. M. M. Kessels, S. B. S. Heil, E. Langereis, J. L. van Hemmen, H. C. M. Knoops, and M. C. M. van de Sanden, ECS Trans., 3, 183 (2007). 10.1149/1.2721487
3. S. E. Potts, W. Keuning, E. Langereis, G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc., 157, P66 (2010).
4. S. B. S. Heil, J. L. van Hemmen, C. J. Hodson, N. Singh, J. H. Klootwijk, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Vac. Sci. Technol. A, 25, 1357 (2007). 10.1116/1.2753846 (Pubitemid 47330598)
5. D. Gahan, B. Dolinaj, and M. B. Hopkins, Rev. Sci. Instrum., 79, 033502 (2008). 10.1063/1.2890100 (Pubitemid 351469748)
6. J. T. Gudmundsson, I. G. Kouznetsov, K. K. Patel, and M. A. Lieberman, J. Phys. D: Appl. Phys., 34, 1100 (2001). 10.1088/0022-3727/34/7/312 (Pubitemid 32393315)
7. T. Takagi, J. Vac. Sci. Technol. A, 2, 382 (1984). 10.1116/1.572748
8. A. J. M. Mackus, S. B. S. Heil, E. Langereis, H. C. M. Knoops, M. C. M. van de Sanden, and W. M. M. Kessels, J. Vac. Sci. Technol. A, 28, 77 (2010). 10.1116/1.3256227
9. A. C. Fozza, A. Kruse, A. Hollander, A. Ricard, and M. R. Wertheimer, J. Vac. Sci. Technol. A, 16, 72 (1998). 10.1116/1.581014 (Pubitemid 128020206)
10. C. Cismaru, J. L. Shohet, J. L. Lauer, R. W. Hansen, and S. Ostapenko, Appl. Phys. Lett., 77, 3914 (2000). 10.1063/1.1331081
11. A. Stesmans and V. V. Afanasev, Appl. Phys. Lett., 80, 1957 (2002). 10.1063/1.1448169 (Pubitemid 34326252)
12. G. Dingemans, R. Seguin, P. Engelhart, M. C. M. van de Sanden, and W. M. M. Kessels, Phys. Status Solidi (RRL), 4, 10 (2010). 10.1002/pssr.200903334
13. G. Dingemans, N. M. Terlinden, D. Pierreux, H. B. Profijt, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid State Lett., 14, H1 (2011).
14. A. W. Flounders, S. A. Bel, and D. W. Hess, J. Electrochem. Soc., 140, 1414 (1993). 10.1149/1.2221571
15. G. S. Upadhyaya and J. L. Shohet, Appl. Phys. Lett., 90, 072904 (2007). 10.1063/1.2591371 (Pubitemid 46280708)
16. R. A. Sinton and A. Cuevas, Appl. Phys. Lett., 69, 2510 (1996). 10.1063/1.117723
17. B. Hoex, S. B. S. Heil, E. Langereis, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett., 89, 042112 (2006). 10.1063/1.2240736 (Pubitemid 44147566)