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Volumn 360, Issue 1-2, 2000, Pages 145-153

Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FILM GROWTH; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SILANES; SPECTROSCOPIC ANALYSIS; STRIPPING (REMOVAL); SURFACE CHEMISTRY; SURFACE TOPOGRAPHY; TEMPERATURE; TUNGSTEN;

EID: 0034140916     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)01076-7     Document Type: Article
Times cited : (173)

References (41)
  • 1
    • 0003552056 scopus 로고    scopus 로고
    • 4300 Stevens Creek Boulevard, San Jose, CA 95129: SIA. (http://www.sematech.org/public/roadmap/index.htm)
    • The National Technology Roadmap for Semiconductors. 1997;SIA, 4300 Stevens Creek Boulevard, San Jose, CA 95129. (http://www.sematech.org/public/roadmap/index.htm).
    • (1997) The National Technology Roadmap for Semiconductors
  • 40
    • 84885757292 scopus 로고
    • Bell Sys
    • Uhlir A. Bell Sys. Tech. 35:1956;333.
    • (1956) Tech. , vol.35 , pp. 333
    • Uhlir, A.1
  • 41
    • 85031591780 scopus 로고
    • Gray D.E. 3rd Edition
    • American Institute of Physics Handbook. Gray D.E. 3rd Edition :1982;McGraw-Hill, New York.
    • (1982)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.