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Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon

(7) Dingemans, G a Engelhart, P b Seguin, R b Einsele, F c Hoex, B a,d Van De Sanden, M C M a Kessels, W M M a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b Q CELLS SE ^* (Germany)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

d NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; C-SI SOLAR CELL; CRYSTALLINE SILICONS; HIGH TEMPERATURE; SCREEN-PRINTED; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; ULTRA-VIOLET; UV IRRADIATION; UV STABILITY;

ALUMINUM; CRYSTALLINE MATERIALS; OXYGEN; SILICON; SILICON NITRIDE; SILICON OXIDES; SILICON SOLAR CELLS;

PASSIVATION;

EID: 72449170046 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3264572 Document Type: Article

Times cited : (157)

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