Enhanced free exciton and direct band-edge emissions at room temperature in ultrathin ZnO films grown on Si nanopillars by atomic layer deposition

ACS Applied Materials and Interfaces

Volumn 3, Issue 11, 2011, Pages 4415-4419

  Chang, Yuan Ming ^a   Shieh, Jiann ^b   Chu, Pei Yuan ^a   Lee, Hsin Yi ^a,c   Lin, Chih Ming ^d   Juang, Jenh Yih ^a,d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

atomic layer deposition; free exciton; Si nanopillars; ultrathin; ZnO

Indexed keywords

AMORPHOUS MATRICES; ATOMIC LAYER DEPOSITED; BAND EDGE; BAND-EDGE EMISSIONS; BOHR RADIUS; ELECTRON-HOLE RECOMBINATION; EMISSION EFFICIENCIES; EMISSION PEAKS; FREE EXCITONS; MAGNITUDE ENHANCEMENT; NANOPILLARS; RECOMBINATION EMISSION; ROOM TEMPERATURE; SELF-MASKING; SI NANOPILLARS; SI SUBSTRATES; SIZE CONFINEMENT EFFECTS; ULTRA-THIN; ULTRA-VIOLET; UV EMISSIONS; VISIBLE EMISSIONS; VISIBLE RANGE; ZNO; ZNO FILMS; ZNO NANOCRYSTAL;

ATOMIC LAYER DEPOSITION; ATOMS; DEFECTS; EXCITONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; METALLIC FILMS; PLASMA DEPOSITION; SILICON; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

ULTRATHIN FILMS;

EID: 84862832922     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am201062t     Document Type: Article

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