Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films

Journal of the Electrochemical Society

Volumn 157, Issue 7, 2010, Pages

  Potts, S E ^a   Keuning, W ^a   Langereis, E ^a   Dingemans, G ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; ELEVATED TEMPERATURE; FILM DENSITY; GROWTH PER CYCLE; LOW DEPOSITION TEMPERATURE; LOW TEMPERATURE PLASMAS; METAL ATOMS; METAL OXIDE THIN FILMS; METAL OXIDES; OXYGEN SOURCES; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE; TEMPERATURE WINDOW; TEMPERATURE-SENSITIVE; THERMAL ALD; THERMAL PROCESS; THIN-FILM DEPOSITIONS; TIO;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; FILM GROWTH; METALLIC COMPOUNDS; OXIDE FILMS; OXYGEN; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TANTALUM;

PLASMA DEPOSITION;

EID: 77953154712     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3428705     Document Type: Article

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