Conformality of plasma-assisted ALD: Physical processes and modeling

Journal of the Electrochemical Society

Volumn 157, Issue 12, 2010, Pages

  Knoops, H C M ^a,b   Langereis, E ^b   Van De Sanden, M C M ^b   Kessels, W M M ^b  

^a MATERIALS INNOVATION INSTITUTE M2I   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL DEPOSITION; CONFORMALITY; DEPOSITION PROFILES; DEPOSITION REGIMES; DIFFUSION LIMITED; DIFFUSION RATE; HIGH ASPECT RATIO STRUCTURES; METAL OXIDES; MONTE CARLO SIMULATION; PHYSICAL PROCESS; RADICAL LOSS; REACTION PROBABILITY; RECOMBINATION LOSS; SATURATION DOSE; SURFACE RECOMBINATION LOSS; THERMAL ALD;

ATOMIC LAYER DEPOSITION; COMPUTER SIMULATION; MODELS; MONTE CARLO METHODS; PLASMA DEPOSITION; PLASMAS; PROBABILITY; PULSED LASER DEPOSITION; STICTION; SUPPORTS;

ASPECT RATIO;

EID: 78449269669     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3491381     Document Type: Article

References (47)

1. J. W. Elam, D. Routkevitch, P. P. Mardilovich, and S. M. George, Chem. Mater. CMATEX 0897-4756, 15, 3507 (2003). 10.1021/cm0303080
2. R. G. Gordon, D. Hausmann, E. Kim, and J. Shepard, Chem. Vap. Deposition CVDEFX 0948-1907, 9, 73 (2003). 10.1002/cvde.200390005
3. B. Dhandapani and S. T. Oyama, Appl. Catal., B ACBEE3 0926-3373, 11, 129 (1997). 10.1016/S0926-3373(96)00044-6
4. A. Burke, G. Braeckelmann, D. Manger, E. Eisenbraun, A. E. Kaloyeros, J. P. Mcvittie, J. Han, D. Bang, J. F. Loan, and J. J. Sullivan, J. Appl. Phys. JAPIAU 0021-8979, 82, 4651 (1997). 10.1063/1.366204
5. H. C. Wulu, K. C. Saraswat, and J. P. Mcvittie, J. Electrochem. Soc. JESOAN 0013-4651, 138, 1831 (1991). 10.1149/1.2085881
6. J. Dendooven, D. Deduytsche, J. Musschoot, R. L. Vanmeirhaeghe, and C. Detavernier, J. Electrochem. Soc. JESOAN 0013-4651, 156, P63 (2009). 10.1149/1.3072694
7. J. Y. Kim, J. H. Ahn, S. W. Kang, and J. H. Kim, J. Appl. Phys. JAPIAU 0021-8979, 101, 073502 (2007). 10.1063/1.2714685
8. A. M. Lankhorst, B. D. Paarhuis, H. J. C. M. Terhorst, P. J. P. M. Simons, and C. R. Kleijn, Surf. Coat. Technol. SCTEEJ 0257-8972, 201, 8842 (2007). 10.1016/j.surfcoat.2007.04.079
9. G. Prechtl, A. Kersch, G. Schulze Icking-Konert, W. Jacobs, T. Hecht, H. Boubekeur, and U. Schröder, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2003, 245.
10. M. Rose and J. W. Bartha, Appl. Surf. Sci. ASUSEE 0169-4332, 255, 6620 (2009). 10.1016/j.apsusc.2009.02.055
11. S. B. S. Heil, J. L. Hemmen, C. J. Hodson, N. Singh, J. H. Klootwijk, F. Roozeboom, M. C. M. van de Sanden, and W. M. M. Kessels, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 25, 1357 (2007). 10.1116/1.2753846
12. H. B. Profijt, P. Kudlacek, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. JESOAN 0013-4651, To be published.
13. R. L. Puurunen, J. Appl. Phys. JAPIAU 0021-8979, 97, 121301 (2005). 10.1063/1.1940727
14. F. Greer, D. Fraser, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 21, 96 (2003). 10.1116/1.1524145
15. M. Rose, J. W. Bartha, and I. Endler, Appl. Surf. Sci. ASUSEE 0169-4332, 256, 3778 (2010). 10.1016/j.apsusc.2010.01.025
16. J. Y. Kim, J. H. Kim, J. H. Ahn, P. K. Park, and S. W. Kang, J. Electrochem. Soc. JESOAN 0013-4651, 154, H1008 (2007). 10.1149/1.2789802
17. E. N. Denbnovetskaya, V. A. Lavrenko, I. A. Podchernyaeva, T. G. Protsenko, N. I. Siman, and V. S. Fomenko, Powder Metall. Met. Ceram. PMMCEF 1068-1302, 10, 289 (1971).
18. J. C. Greaves and J. W. Linnett, Trans. Faraday Soc. TFSOA4 0014-7672, 55, 1346 (1959). 10.1039/tf9595501346
19. J. C. Greaves and J. W. Linnett, Trans. Faraday Soc. TFSOA4 0014-7672, 55, 1355 (1959). 10.1039/tf9595501355
20. B. J. Wood and H. Wise, J. Phys. Chem. JPCHAX 0022-3654, 65, 1976 (1961). 10.1021/j100828a015
21. J. L. van Hemmen, S. B. S. Heil, J. H. Klootwijk, F. Roozeboom, C. J. Hodson, M. C. M. van de Sanden, and W. M. M. Kessels, J. Electrochem. Soc. JESOAN 0013-4651, 154, G165 (2007). 10.1149/1.2737629
22. N. G. Kubala, P. C. Rowlette, and C. A. Wolden, J. Phys. Chem. C JPCCCK 1932-7447, 113, 16307 (2009). 10.1021/jp907266c
23. A. Niskanen, U. Kreissig, M. Leskela, and M. Ritala, Chem. Mater. CMATEX 0897-4756, 19, 2316 (2007). 10.1021/cm0626482
24. J. Y. Kim, D. Y. Kim, H. O. Park, and H. T. Jeon, J. Electrochem. Soc. JESOAN 0013-4651, 152, G29 (2005). 10.1149/1.1825913
25. J. S. Park, H. S. Park, and S. W. Kang, J. Electrochem. Soc. JESOAN 0013-4651, 149, C28 (2002). 10.1149/1.1423642
26. L. Wu and E. Eisenbraun, J. Electrochem. Soc. JESOAN 0013-4651, 156, H734 (2009). 10.1149/1.3166184
27. A. Niskanen, T. Hatanpaa, K. Arstila, M. Leskela, and M. Ritala, Chem. Vap. Deposition CVDEFX 0948-1907, 13, 408 (2007). 10.1002/cvde.200606519
28. H. Kim, C. Cabral, C. Lavoie, and S. M. Rossnagel, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 20, 1321 (2002). 10.1116/1.1486233
29. W. M. M. Kessels, Baltic Conference on Atomic Layer Deposition 2006, Centre for Materials Science and Nanotechnology, p. 20 (2006).
30. J. Dendooven, D. Deduytsche, J. Musschoot, R. L. Vanmeirhaeghe, and C. Detavernier, J. Electrochem. Soc. JESOAN 0013-4651, 157, G111 (2010). 10.1149/1.3301664
31. I. Perez, E. Robertson, P. Banerjee, L. Henn-Lecordier, S. J. Son, S. B. Lee, and G. W. Rubloff, Small SMALBC 1613-6810, 4, 1223 (2008). 10.1002/smll.200700815
32. L. Wu and E. Eisenbraun, J. Vac. Sci. Technol. B JVTBD9 1071-1023, 25, 2581 (2007). 10.1116/1.2779050
33. J. T. M. Walraven and I. F. Silvera, Rev. Sci. Instrum. RSINAK 0034-6748, 53, 1167 (1982). 10.1063/1.1137152
34. Y. Sekine, Atmos. Environ. AENVEQ 1352-2310, 36, 5543 (2002). 10.1016/S1352-2310(02)00670-2
35. M. Pradhan, M. Kalberer, P. T. Griffiths, C. F. Braban, F. D. Pope, R. A. Cox, and R. M. Lambert, Environ. Sci. Technol. ESTHAG 0013-936X, 44, 1360 (2010). 10.1021/es902916f
36. W. Li, G. V. Gibbs, and S. T. Oyama, J. Am. Chem. Soc. JACSAT 0002-7863, 120, 9041 (1998). 10.1021/ja981441+
37. W. Li and S. T. Oyama, J. Am. Chem. Soc. JACSAT 0002-7863, 120, 9047 (1998). 10.1021/ja9814422
38. R. C. Sullivan, T. Thornberry, and J. P. D. Abbatt, Atmos. Chem. Phys. ACPTCE 1680-7316, 4, 1301 (2004). 10.5194/acp-4-1301-2004
39. H. Itoh, I. M. Rusinov, S. Suzuki, and T. Suzuki, Plasma Processes Polym. PPPLA6 1612-8850, 2, 227 (2005). 10.1002/ppap.200400057
40. S. T. Oyama, Catal. Rev.-Sci. Eng. CRSEC9 0161-4940, 42, 279 (2000). 10.1081/CR-100100263
41. J. Hämäläinen, F. Munnik, M. Ritala, and M. Leskelä, J. Electrochem. Soc. JESOAN 0013-4651, 156, D418 (2009). 10.1149/1.3190157
42. Y. C. Kim and M. Boudart, Langmuir LANGD5 0743-7463, 7, 2999 (1991). 10.1021/la00060a016
43. A. D. Tserepi and T. A. Miller, J. Appl. Phys. JAPIAU 0021-8979, 75, 7231 (1994). 10.1063/1.356680
44. J. Abrefah and D. R. Olander, Surf. Sci. SUSCAS 0039-6028, 209, 291 (1989). 10.1016/0039-6028(89)90077-0
45. A. Bouchoule and P. Ranson, J. Vac. Sci. Technol. A JVTAD6 0734-2101, 9, 317 (1991). 10.1116/1.577508
46. S. F. Adams and T. A. Miller, Plasma Sources Sci. Technol. PSTEEU 0963-0252, 9, 248 (2000). 10.1088/0963-0252/9/3/302
47. M. Mozetic and A. Zalar, Appl. Surf. Sci. ASUSEE 0169-4332, 158, 263 (2000). 10.1016/S0169-4332(00)00007-6