Plasma-enhanced atomic layer deposition of cobalt using cyclopentadienyl isopropyl acetamidinato-cobalt as a precursor

Japanese Journal of Applied Physics

Volumn 49, Issue 5 PART 3, 2010, Pages

  Kim, Jae Min ^a   Lee, Han Bo Ram ^a   Lansalot, Clement ^a,b   Dussarrat, Christian ^a,b   Gatineau, Julien ^a,b   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDING STATE; CO DEPOSITION; CO FILMS; CO THIN FILMS; CYCLOPENTADIENYLS; DEPOSITION CHARACTERISTICS; DIRECT DEPOSITION; FILMS PROPERTIES; IMPURITY LEVEL; LIFT-OFF METHODS; LOW GROWTH TEMPERATURE; PATTERNED SUBSTRATES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SI (001) SUBSTRATE;

ATOMIC LAYER DEPOSITION; CHEMICAL BONDS; DEPOSITION; FILM GROWTH; GROWTH TEMPERATURE; PLASMA DEPOSITION; SILICON COMPOUNDS; SUBSTRATES;

COBALT;

EID: 77953169466     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.05FA10     Document Type: Article

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