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Volumn 15, Issue 15, 2003, Pages 2969-2976

Highly conformal thin films of tungsten nitride prepared by atomic layer deposition from a novel precursor

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL COATINGS;

EID: 0042266842     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm021772s     Document Type: Article
Times cited : (140)

References (28)
  • 10
    • 0042485664 scopus 로고    scopus 로고
    • U.S. Patent 6,551,935, 2003
    • Sinha, N.; Chopra, D. U.S. Patent 6,551,935, 2003.
    • Sinha, N.1    Chopra, D.2
  • 25
    • 0027662669 scopus 로고
    • This result is an interesting contrast with CVD of TiN in which the nitrogen in the film comes from the ammonia, rather than the titanium alkylamide precursor. See Prybyla, J. A.; Chiang, C. M.; Dubois, L. H. J. Electrochem. Soc, 1993, 140, 2695.
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 2695
    • Prybyla, J.A.1    Chiang, C.M.2    Dubois, L.H.3
  • 26
    • 0001179629 scopus 로고
    • Tsai, M. H.; Sun, S. C.; Chiu, H. Y.; Tsai, C. E.; Chuand, S. H. Appl. Phys. Lett. 1995, 67, 1128, suggested that the Ta=N in tert-butylimidotris(diethylamido)tantalum was preserved during the pyrolysis process and ended up in the tantalum nitride films that were grown under low-pressure MOCVD conditions.
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 1128
    • Tsai, M.H.1    Sun, S.C.2    Chiu, H.Y.3    Tsai, C.E.4    Chuand, S.H.5
  • 28
    • 0042485663 scopus 로고    scopus 로고
    • note
    • The system was simplified by using hydrogen atoms to terminate bonds more than two bonds away from the reaction center. The structures and energies of the reactants, products, and transition state were calculated by the Gaussian program with the MP2 method using a LanL2DZP basis set.


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