Sic 2 atomic layer deposition using tris(dimethylamino)silane and hydrogen peroxide studied by in situ Transmission FTIR spectroscopy

Journal of Physical Chemistry C

Volumn 113, Issue 19, 2009, Pages 8249-8257

  Burton, B B ^a   Rang, S W ^a,d   Rhee, S W ^b   George, S M ^a,c  

^a UNIVERSITY OF COLORADO   (United States)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c UCB 450   (United States)

^d Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBANCE; FTIR; FTIR SPECTROSCOPY; GROWTH PER CYCLE; IN-SITU FT-IR; IN-SITU TRANSMISSION; REACTION CYCLES; SILICON DIOXIDE; SILICON PRECURSORS; STRETCHING VIBRATIONS; SURFACE SPECIES; TEM; TEMPERATURE RANGE; TETRAKIS; TRIMETHYLSILANE; VIBRATIONAL MODES; VINYLTRIMETHOXYSILANE;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROWTH (MATERIALS); HYDROGEN; HYDROGEN PEROXIDE; IN SITU PROCESSING; MOLECULAR SPECTROSCOPY; OXIDANTS; SILANES; SILICA; SILICON; SILICON NITRIDE; STRETCHING; SURFACE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; VIBRATIONAL SPECTRA;

SILICON OXIDES;

EID: 67049135968     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp806638e     Document Type: Article

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