In situ reaction mechanism studies on atomic layer deposition of Sb 2Te3 and GeTe from (Et3Si)2Te and chlorides

Chemistry of Materials

Volumn 22, Issue 4, 2010, Pages 1386-1391

  Knapas, Kjell ^a   Hatanpää, Timo ^a   Ritala, Mikko ^a   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY TELLURIDE; IN-SITU; IN-SITU REACTIONS; METAL PRECURSOR; OH SURFACE GROUPS; OXYGEN SOURCES; QUADRUPOLE MASS SPECTROMETER; REACTION MECHANISM; REACTIVE SITE; SURFACE GROUPS; TE PROCESS;

ANTIMONY; CHLORINE COMPOUNDS; ETHERS; GERMANIUM; MASS SPECTROMETRY; OXIDE MINERALS; OXYGEN; PHASE CHANGE MATERIALS; QUARTZ; SILICON; SILICON CARBIDE; SURFACES; SYSTEM THEORY;

TELLURIUM COMPOUNDS;

EID: 77049107645     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm902180d     Document Type: Article

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