Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and selenium

Journal of the American Chemical Society

Volumn 131, Issue 10, 2009, Pages 3478-3480

  Pore, Viljami ^a   Hatanpää, Timo ^a   Ritala, Mikko ^a   Leskela, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALD GROWTH; ALD PRECURSOR; ANTIMONY TELLURIDE; CONFORMAL DEPOSITION; CONFORMALITY; HIGH ASPECT RATIO TRENCHES; HIGH REACTIVITY; HIGH STORAGE DENSITY; METAL HALIDE; PHASE CHANGE RANDOM ACCESS MEMORY; SELENIDES; THIN FILM MATERIAL;

ANTIMONY; ASPECT RATIO; COPPER COMPOUNDS; DEPOSITION; GERMANIUM; METALS; PHOTOVOLTAIC CELLS; SELENIUM; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SILICON; SOLID ELECTROLYTES; SYSTEM THEORY; TELLURIUM; THIN FILMS;

ATOMIC LAYER DEPOSITION;

SELENIUM; TELLURIUM;

ARTICLE; ATOMIC LAYER DEPOSITION; CHEMICAL BOND; CHEMICAL MODIFICATION; CHEMICAL STRUCTURE; ELIMINATION REACTION; STOICHIOMETRY; SYNTHESIS;

EID: 67749106317     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja8090388     Document Type: Article

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