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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

Role of surface intermediates in enhanced, uniform growth rates of TiO 2 atomic layer deposition thin films using titanium tetraisopropoxide and ozone

(3) Cleveland, Erin R a,b Henn Lecordier, Laurent a,c Rubloff, Gary W a

a UNIVERSITY OF MARYLAND (United States)

b Navy Research Laboratory (United States)

c Cambridge Nanotech (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELAY TIME; ENHANCED GROWTH; HIGH UNIFORMITY; MULTIPLE PULSE; REACTION CHAMBERS; RESIDENCE TIME; SECONDARY REACTIONS; SURFACE INTERMEDIATES; SURFACE PRODUCTS; SURFACE SPECIES; TIO; TITANIUM TETRAISOPROPOXIDE;

ATOMIC LAYER DEPOSITION; DEPOSITION; DESORPTION; ECOLOGY; GROWTH RATE; OZONE; REACTION RATES; THIN FILMS; TITANIUM; TITANIUM DIOXIDE; VAPOR DEPOSITION;

SURFACE REACTIONS;

EID: 84855606466 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3669522 Document Type: Review

Times cited : (20)

References (33)

1
- 41549108889
- 10.1016/j.powtec.2008.01.025
- D. M. King, X. H. Liang, Y. Zhou, C. S. Carney, L. F. Hakim, P. Li, and A. W. Weimer, Powder Technol. 183, 356 (2008). 10.1016/j.powtec.2008.01.025
- (2008) Powder Technol. , vol.183 , pp. 356
- King, D.M.¹ Liang, X.H.² Zhou, Y.³ Carney, C.S.⁴ Hakim, L.F.⁵ Li, P.⁶ Weimer, A.W.⁷

2
- 34848817167
- 10.1002/cvde.v13:4
- A. Niskanen, K. Arstila, M. Leskela, and M. Ritala, Chem. Vap. Deposition 13, 152 (2007). 10.1002/cvde.v13:4
- (2007) Chem. Vap. Deposition , vol.13 , pp. 152
- Niskanen, A.¹ Arstila, K.² Leskela, M.³ Ritala, M.⁴

3
- 57049095860
- 10.1021/jp8070794
- L. K. Tan, H. Gao, Y. Zong, and W. Knoll, J. Phys. Chem. C 112, 17576 (2008). 10.1021/jp8070794
- (2008) J. Phys. Chem. C , vol.112 , pp. 17576
- Tan, L.K.¹ Gao, H.² Zong, Y.³ Knoll, W.⁴

4
- 15844429772
- Atomic layer deposition in porous structures: 3D photonic crystals
- DOI 10.1016/j.apsusc.2004.10.110, PII S0169433204017544, 12th International Conference on Solid Films and Surfaces
- J. S. King, D. Heineman, E. Graugnard, and C. J. Summers, Appl. Surf. Sci. 244, 511 (2005). 10.1016/j.apsusc.2004.10.110 (Pubitemid 40423763)
- (2005) Applied Surface Science , vol.244 , Issue.1-4 , pp. 511-516
- King, J.S.¹ Heineman, D.² Graugnard, E.³ Summers, C.J.⁴

5
- 33846055461
- 10.1016/j.mss2006.10.027
- I. Jogi, K. Kukli, J. Aarik, A. Aidla, and J. Lu, Mater. Sci. Semicond. Process. 9, 1084 (2006). 10.1016/j.mssp.2006.10.027
- (2006) Mater. Sci. Semicond. Process. , vol.9 , pp. 1084
- Jogi, I.¹ Kukli, K.² Aarik, J.³ Aidla, A.⁴ Lu, J.⁵

6
- 0035872897
- 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

7
- 33645726826
- 10.1149/1.2186427
- W. J. Maeng and H. Kim, Electrochem. Solid-State Lett. 9, G191 (2006). 10.1149/1.2186427
- (2006) Electrochem. Solid-State Lett. , vol.9 , pp. 191
- Maeng, W.J.¹ Kim, H.²

8
- 46949112023
- 10.1021/cm800280t
- S. K. Kim, G. J. Choi, J. H. Kim, and C. S. Hwang, Chem. Mater. 20, 3723 (2008). 10.1021/cm800280t
- (2008) Chem. Mater. , vol.20 , pp. 3723
- Kim, S.K.¹ Choi, G.J.² Kim, J.H.³ Hwang, C.S.⁴

9
- 14644412936
- An ab initio study of titanium tetra-iso-propoxide (TTIP) adsorption mechanism on a Si(1 0 0) surface
- DOI 10.1016/j.commatsci.2004.12.051, PII S0927025604003647, Proceedings of the E-MRS 2004 Spring Meeting: Symposium H: Atomic materials Design: Modelling and Characterization
- A. Palma and A. Alavi, Comput. Mater. Sci. 33, 244 (2005). 10.1016/j.commatsci.2004.12.051 (Pubitemid 40319681)
- (2005) Computational Materials Science , vol.33 , Issue.1-3 , pp. 244-249
- Palma, A.¹ Alavi, A.²

10
- 25444496696
- 2 films grown by high-pressure reactive sputtering and atomic layer deposition
- DOI 10.1088/0268-1242/20/10/011, PII S0268124205955995
- S. Duenas, H. Castan, H. Garcia, E. San Andres, M. Toledano-Luque, I. Martil, G. Gonzalez-Diaz, K. Kukli, T. Uustare, and J. Aarik, Semicond. Sci. Technol. 20, 1044 (2005). 10.1088/0268-1242/20/10/011 (Pubitemid 41366334)
- (2005) Semiconductor Science and Technology , vol.20 , Issue.10 , pp. 1044-1051
- Dueas, S.¹ Castan, H.² Garcia, H.³ Andres, E.S.⁴ Toledano-Luque, M.⁵ Martil, I.⁶ Gonzalez-Diaz, G.⁷ Kukli, K.⁸ Uustare, T.⁹ Aarik, J.¹⁰

11
- 69149102477
- 10.1149/1.3125287
- N. G. Kubala, P. C. Rowlette, and C. A. Wolden, Electrochem. Solid State Lett. 12, H259 (2009). 10.1149/1.3125287
- (2009) Electrochem. Solid State Lett. , vol.12 , pp. 259
- Kubala, N.G.¹ Rowlette, P.C.² Wolden, C.A.³

12
- 35648995895
- Atomic layer deposition of Ti O2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2 O
- DOI 10.1063/1.2798384
- Q. Xie, Y. L. Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, G. P. Ru, B. Z. Li, and X. P. Qu, J. Appl. Phys. 102, 083521 (1) (2007). 10.1063/1.2798384 (Pubitemid 350025635)
- (2007) Journal of Applied Physics , vol.102 , Issue.8 , pp. 083521
- Xie, Q.¹ Jiang, Y.-L.² Detavernier, C.³ Deduytsche, D.⁴ Van Meirhaeghe, R.L.⁵ Ru, G.-P.⁶ Li, B.-Z.⁷ Qu, X.-P.⁸

13
- 21744444606
- Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
- DOI 10.1063/1.1940727, 121301
- R. L. Puurunen, J. Appl. Phys. 97 (2005). 10.1063/1.1940727 (Pubitemid 40940570)
- (2005) Journal of Applied Physics , vol.97 , Issue.12 , pp. 1-52
- Puurunen, R.L.¹

14
- 49149124418
- 10.1149/1.2955724
- Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J.Electrochem. Soc. 155, H688 (2008). 10.1149/1.2955724
- (2008) J.Electrochem. Soc. , vol.155 , pp. 688
- Xie, Q.¹ Musschoot, J.² Deduytsche, D.³ Van Meirhaeghe, R.L.⁴ Detavernier, C.⁵ Van Den Berghe, S.⁶ Jiang, Y.L.⁷ Ru, G.P.⁸ Li, B.Z.⁹ Qu, X.P.¹⁰

15
- 68349106863
- 10.1021/jp903669c
- V. R. Rai and S. Agarwal, J. Phys. Chem. C 113, 12962 (2009). 10.1021/jp903669c
- (2009) J. Phys. Chem. C , vol.113 , pp. 12962
- Rai, V.R.¹ Agarwal, S.²

16
- 0000646519
- 10.1021/cm00032a023
- M. Ritala, M. Leskela, L. Niinisto, and P. Haussalo, Chem. Mater. 5, 1174 (1993). 10.1021/cm00032a023
- (1993) Chem. Mater. , vol.5 , pp. 1174
- Ritala, M.¹ Leskela, M.² Niinisto, L.³ Haussalo, P.⁴

17
- 0034229297
- 10.1016/S0169-4332(00)00274-9
- J. Aarik, A. Aidla, T. Uustare, M. Ritala, and M. Leskela, Appl. Surf. Sci. 161, 385 (2000). 10.1016/S0169-4332(00)00274-9
- (2000) Appl. Surf. Sci. , vol.161 , pp. 385
- Aarik, J.¹ Aidla, A.² Uustare, T.³ Ritala, M.⁴ Leskela, M.⁵

18
- 30944454290
- x films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water
- DOI 10.1016/j.tsf.2005.07.121, PII S0040609005009909, Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
- G. T. Lim and D. H. Kim, Thin Solid Films 498, 254 (2006). 10.1016/j.tsf.2005.07.121 (Pubitemid 43113159)
- (2006) Thin Solid Films , vol.498 , Issue.1-2 , pp. 254-258
- Lim, G.T.¹ Kim, D.-H.²

19
- 45749104689
- 10.1021/cm703667h
- J. H. Kwon, M. Dai, M. D. Halls, and Y. J. Chabal, Chem. Mater. 20, 3248 (2008). 10.1021/cm703667h
- (2008) Chem. Mater. , vol.20 , pp. 3248
- Kwon, J.H.¹ Dai, M.² Halls, M.D.³ Chabal, Y.J.⁴

20
- 37549002435
- 10.1557/JMR.2007.0439
- R. Katamreddy, R. Inman, G. Jursich, A. Soulet, and C. Takoudis, J.Mater. Res. 22, 3455 (2007). 10.1557/JMR.2007.0439
- (2007) J.Mater. Res. , vol.22 , pp. 3455
- Katamreddy, R.¹ Inman, R.² Jursich, G.³ Soulet, A.⁴ Takoudis, C.⁵

21
- 34547566586
- 2 films grown by atomic layer deposition for memory capacitor applications
- DOI 10.1063/1.2757008
- S. K. Kim, S. Y. Lee, M. Seo, G. J. Choi, and C. S. Hwang, J. Appl. Phys. 102 (2007). 10.1063/1.2757008 (Pubitemid 47191992)
- (2007) Journal of Applied Physics , vol.102 , Issue.2 , pp. 024109
- Kim, S.K.¹ Lee, S.Y.² Seo, M.³ Choi, G.-J.⁴ Hwang, C.S.⁵

22
- 53549117718
- 10.1021/jp8028616
- V. R. Rai and S. Agarwal, J. Phys. Chem. C 112, 9552 (2008). 10.1021/jp8028616
- (2008) J. Phys. Chem. C , vol.112 , pp. 9552
- Rai, V.R.¹ Agarwal, S.²

23
- 34848905648
- Effect of process pressure on atomic layer deposition of Al2 O3
- DOI 10.1149/1.2778861
- M. Y. Li, Y. Y. Chang, H. C. Wu, C. S. Huang, J. C. Chen, J. L. Lue, and S. M. Chang, J. Electrochem. Soc. 154, H967 (2007). 10.1149/1.2778861 (Pubitemid 47505048)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.11
- Li, M.-Y.¹ Chang, Y.-Y.² Wu, H.-C.³ Huang, C.-S.⁴ Chen, J.-C.⁵ Lue, J.-L.⁶ Chang, S.-M.⁷

24
- 80052415917
- 10.1116/1.3620421
- L. Henn-Lecordier, M. Anderle, E. Robertson, and G. W. Rubloff, J. Vac. Sci. Technol. A 29, 051509 (2011). 10.1116/1.3620421
- (2011) J. Vac. Sci. Technol. A , vol.29 , pp. 051509
- Henn-Lecordier, L.¹ Anderle, M.² Robertson, E.³ Rubloff, G.W.⁴

25
- 0033739843
- 10.1016/S0040-6090(00)00890-7
- R. Matero, A. Rahtu, M. Ritala, M. Leskela, and T. Sajavaara, Thin Solid Films 368, 1 (2000). 10.1016/S0040-6090(00)00890-7
- (2000) Thin Solid Films , vol.368 , pp. 1
- Matero, R.¹ Rahtu, A.² Ritala, M.³ Leskela, M.⁴ Sajavaara, T.⁵

26
- 77957951107
- 10.1021/am900807a
- M. Rose, J. Niinisto, I. Endler, J. W. Bartha, P. Kucher, and M. Ritala, Acs Appl. Mater. Interfaces 2, 347. 10.1021/am900807a
- Acs Appl. Mater. Interfaces , vol.2 , pp. 347
- Rose, M.¹ Niinisto, J.² Endler, I.³ Bartha, J.W.⁴ Kucher, P.⁵ Ritala, M.⁶

27
- 15744384552
- ALD of hafnium oxide thin films from tetrakis(ethylmethylamino)hafnium and ozone
- DOI 10.1149/1.1859631
- X. Y. Liu, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang, and R. G. Gordon, J. Electrochem. Soc. 152, G213 (2005). 10.1149/1.1859631 (Pubitemid 40407354)
- (2005) Journal of the Electrochemical Society , vol.152 , Issue.3
- Liu, X.¹ Ramanathan, S.² Longdergan, A.³ Srivastava, A.⁴ Lee, E.⁵ Seidel, T.E.⁶ Barton, J.T.⁷ Pang, D.⁸ Gordon, R.G.⁹

28
- 0002179435
- Reaction mechanism studies on titanium isopropoxide-water atomic layer deposition process
- DOI 10.1002/1521-3862(20020116)8:1<21::AID-CVDE21>3.0.CO;2-0
- A. Rahtu and M. Ritala, Chem. Vap. Deposition 8, 21 (2002). 10.1002/1521-3862(20020116)8:1<21::AID-CVDE21>3.0.CO;2-0 (Pubitemid 135684077)
- (2002) Chemical Vapor Deposition , vol.8 , Issue.1 , pp. 21-28
- Rahtu, A.¹ Ritala, M.²

29
- 0030232382
- 10.1016/S0040-6090(96)08848-7
- C. R. Ottermann and K. Bange, Thin Solid Films 286, 32 (1996). 10.1016/S0040-6090(96)08848-7
- (1996) Thin Solid Films , vol.286 , pp. 32
- Ottermann, C.R.¹ Bange, K.²

30
- 0031553497
- 10.1016/S0040-6090(96)08934-1
- A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, Thin Solid Films 292, 135 (1997). 10.1016/S0040-6090(96)08934-1
- (1997) Thin Solid Films , vol.292 , pp. 135
- Ott, A.W.¹ Klaus, J.W.² Johnson, J.M.³ George, S.M.⁴

31
- 0033700652
- 10.1016/S0169-4332(99)00580-2
- H. S. Park, J. S. Min, J. W. Lim, and S. W. Kang, Appl. Surf. Sci. 158, 81 (2000). 10.1016/S0169-4332(99)00580-2
- (2000) Appl. Surf. Sci. , vol.158 , pp. 81
- Park, H.S.¹ Min, J.S.² Lim, J.W.³ Kang, S.W.⁴

32
- 0034853664
- Atomic layer deposition of zirconium titanium oxide from titanium isopropoxide and zirconium chloride
- DOI 10.1021/cm0012062
- A. Rahtu, M. Ritala, and M. Leskela, Chem. Mater. 13, 1528 (2001). 10.1021/cm0012062 (Pubitemid 32845312)
- (2001) Chemistry of Materials , vol.13 , Issue.5 , pp. 1528-1532
- Rahtu, A.¹ Ritala, M.² Leskela, M.³

33
- 0028400662
- 10.1016/0040-6090(94)90849-4
- G. A. Battiston, R. Gerbasi, M. Porchia, and A. Marigo, Thin Solid Films 239, 186 (1994). 10.1016/0040-6090(94)90849-4
- (1994) Thin Solid Films , vol.239 , pp. 186
- Battiston, G.A.¹ Gerbasi, R.² Porchia, M.³ Marigo, A.⁴

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