Correlation between the growth-per-cycle and the surface hydroxyl group concentration in the atomic layer deposition of aluminum oxide from trimethylaluminum and water

Applied Surface Science

Volumn 245, Issue 1-4, 2005, Pages 6-10

  Puurunen, Riikka L ^a,b,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

Aluminum oxide; Atomic layer deposition; High dielectrics; Mechanism

Indexed keywords

ADSORPTION; CORRELATION METHODS; DIELECTRIC MATERIALS; REACTION KINETICS; SILICA; SUBSTRATES; WATER;

ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION (ALD); LIGAND EXCHANGE; REACTION CHEMISTRY;

ALUMINUM COMPOUNDS;

EID: 17044439097     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.003     Document Type: Article

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