메뉴 건너뛰기




Volumn 31, Issue 1, 2013, Pages

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; GROWTH PER CYCLE; ION ENERGIES; ION FLUXES; MASS DENSITIES; MATERIAL PROPERTY; METAL OXIDE THIN FILMS; OPTICAL EMISSIONS; REMOTE PLASMAS; SUBSTRATE BIAS VOLTAGES; SUBSTRATE BIASING; TIO;

EID: 84871862383     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4756906     Document Type: Article
Times cited : (97)

References (30)
  • 9
    • 0027578647 scopus 로고
    • Simple model for the formation of compressive stress in thin films by ion bombardment
    • DOI 10.1016/0040-6090(93)90201-Y
    • C. A. Davis, Thin Solid Films 226, 30 (1993). 10.1016/0040-6090(93)90201- Y (Pubitemid 23639827)
    • (1993) Thin Solid Films , vol.226 , Issue.1 , pp. 30-34
    • Davis, C.A.1
  • 11
    • 79951974143 scopus 로고    scopus 로고
    • S. Woo, J. Lee, Y. Kim, J. Lee, I.-J. Choi, Y.-D. Kim, C.-W. Chung, and H. Jeon, 10.1149/1.3511769
    • H. Kim, S. Woo, J. Lee, Y. Kim, J. Lee, I.-J. Choi, Y.-D. Kim, C.-W. Chung, and H. Jeon, J. Electrochem. Soc. 158, H21 (2011). 10.1149/1.3511769
    • (2011) J. Electrochem. Soc. , vol.158 , pp. 21
    • Kim, H.1
  • 13
    • 0014756355 scopus 로고
    • 10.1147/rd.142.0172
    • J. S. Logan, IBM J. Res. Dev. 14, 172 (1970). 10.1147/rd.142.0172
    • (1970) IBM J. Res. Dev. , vol.14 , pp. 172
    • Logan, J.S.1
  • 18
    • 41549090909 scopus 로고    scopus 로고
    • Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode
    • DOI 10.1063/1.2890100
    • D. Gahan, B. Dolinaj, and M. B. Hopkins, Rev. Sci. Instrum. 79, 033502 (2008). 10.1063/1.2890100 (Pubitemid 351469748)
    • (2008) Review of Scientific Instruments , vol.79 , Issue.3 , pp. 033502
    • Gahan, D.1    Dolinaj, B.2    Hopkins, M.B.3
  • 28
    • 35348902559 scopus 로고    scopus 로고
    • The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition
    • DOI 10.1063/1.2786873
    • A. H. M. Smets, W. M. M. Kessels, and M. C. M. van de Sanden, J. Appl. Phys. 102, 073523 (2007). 10.1063/1.2786873 (Pubitemid 47587809)
    • (2007) Journal of Applied Physics , vol.102 , Issue.7 , pp. 073523
    • Smets, A.H.M.1    Kessels, W.M.M.2    Van De Sanden, M.C.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.