In situ reaction mechanism studies on the new tBuN=M(NEt 2)3 -water and tBuN=M(NEt2) 3 - Ozone (M = Nb,Ta) atomic layer deposition processes

Chemistry of Materials

Volumn 24, Issue 9, 2012, Pages 1555-1561

  Tomczak, Yoann ^a   Knapas, Kjell ^a   Sundberg, Markku ^a   Leskelä, Markku ^a   Ritala, Mikko ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

Author keywords

atomic layer deposition (ALD); mass spectrometry; niobium oxide; quartz crystal microbalance (QCM); tantalum oxide

Indexed keywords

LIGANDS; MASS SPECTROMETRY; NIOBIUM OXIDE; OZONE; OZONE LAYER; QUANTUM CHEMISTRY; QUARTZ; QUARTZ CRYSTAL MICROBALANCES; TANTALUM OXIDES;

COMBUSTION BY-PRODUCTS; GENERAL INFORMATION; IN-SITU INVESTIGATIONS; LIGAND EXCHANGE REACTIONS; MOLECULAR ADSORPTION; QUADRUPOLE MASS SPECTROMETRY; QUANTUM CHEMICAL CALCULATIONS; REACTION MECHANISM;

ATOMIC LAYER DEPOSITION;

EID: 84860741345     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm202933g     Document Type: Article

References (43)

1. Suntola, T.; Antson, J. Ger. Offen. 1976, 1975-2553048; 1974-3473, 30.
2. Leskelä, M.; Ritala, M. Angew. Chem., Int. Ed. Engl. 2003, 42, 5548
3. Ritala, M.; Kukli, K.; Rahtu, A.; Raisanen, P. I.; Leskelä, M.; Sajavaara, T.; Keinonen, J. Science (Washington, D. C.) 2000, 288, 319
4. Niinistö, J.; Rahtu, A.; Putkonen, M.; Ritala, M.; Leskelä, M.; Niinistö, L. Langmuir 2005, 21, 7321
5. Rahtu, A.; Alaranta, T.; Ritala, M. Langmuir 2001, 17, 6506
6. Rahtu, A.; Kukli, K.; Ritala, M. Chem. Mater. 2001, 13, 817
7. Matero, R.; Rahtu, A.; Ritala, M. Chem. Mater. 2001, 13, 4506
8. Matero, R.; Rahtu, A.; Ritala, M. Langmuir 2005, 21, 3498
9. Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T. Appl. Phys. Lett. 2011, 98, 023506/1
10. Lintanf-Salauen, A.; Mantoux, A.; Djurado, E.; Blanquet, E. Microelectron. Eng. 2009, 87, 373
11. Stromme, M.; Niklasson, G. A.; Ritala, M.; Leskelä, M.; Kukli, K. J. Appl. Phys. 2001, 90, 4532
12. Salmi, L. D.; Puukilainen, E.; Vehkamaeki, M.; Heikkilä, M.; Ritala, M. Chem. Vap. Deposition 2009, 15, 221
13. Smith, S. W.; McAuliffe, K. G.; Conley, J. F., Jr. Solid-State Electron. 2010, 54, 1076
14. Kukli, K.; Ihanus, J.; Leskelä, M. J. Electrochem. Soc. 1997, 144, 300
15. Ahn, K. Y.; Forbes, L. U. S. Pat. Appl. Publ. 2006, 2005-29757; 2005-29757, 18.
16. Kim, D. U. S. Pat. Appl. Publ. 2007, 2006-411568; 2005-58566, 11.
17. Christensen, C.; De Reus, R.; Bouwstra, S. IEEE Int. Conf. Micro Electro Mech. Syst., Tech. Dig., 12th; 1999;, 267.
18. Matero, R.; Ritala, M.; Leskelä, M.; Salo, T.; Aromaa, J.; Forsen, O. J. Phys. IV 1999, 9, 493
19. Nagaraj, B. A.; Ackerman, J. F.; Stowell, W. R.; Lee, C. U. S. Pat. Appl. Publ. 2004, 2002-317731; 2002-317731, 8.
20. Kukli, K.; Ritala, M.; Leskelä, M.; Lappalainen, R. Chem. Vap. Deposition 1998, 4, 29
21. Elers, K.; Ritala, M.; Leskelä, M.; Rauhala, E. Appl. Surf. Sci. 1994, 82/83, 468
22. Knapas, K.; Rahtu, A.; Ritala, M. Chem. Vap. Deposition 2009, 15, 269
23. Knapas, K.; Rahtu, A.; Ritala, M. Langmuir 2010, 26, 848
24. Rooth, M.; Kukli, K.; Haarsta, A. Proc.-Electrochem. Soc. 2005, 2005-09, 598
25. Song, H.; Koh, W.; Kang, S. Mater. Res. Soc. Symp. Proc. 1999, 567, 469
26. Kukli, K.; Ritala, M.; Leskelä, M. Chem. Mater. 2000, 12, 1914
27. Lee, Y.; Kwak, J.; Gang, B.; Kim, H.; Choi, B.; Jeong, B.; Park, S.; Lee, K. J. Electrochem. Soc. 2004, 151, C52
28. Sundqvist, J.; Hoegberg, H.; Harsta, A. Chem. Vap. Deposition 2003, 9, 245
29. Kukli, K.; Aarik, J.; Aidla, A.; Forsgren, K.; Sundqvist, J.; Hrsta, A.; Uustare, T.; Maendar, H.; Kiisler, A. Chem. Mater. 2001, 13, 122
30. Niskanen, A.; Kreissig, U.; Leskelä, M.; Ritala, M. Chem. Mater. 2007, 19, 2316
31. Potts, S. E.; Keuning, W.; Langereis, E.; Dingemans, G.; van de Sanden, M. C. M.; Kessels, W. M. M. J. Electrochem. Soc. 2010, 157, P66
32. Hausmann, D. M.; de Rouffignac, P.; Smith, A.; Gordon, R.; Monsma, D. Thin Solid Films 2003, 443, 1
33. Maeng, W. J.; Park, S.; Kim, H. J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. - Process., Meas., Phenom. 2006, 24, 2276
34. Wiedmann, M. K.; Winter, C. H. Abstracts of Papers, 237th ACS National Meeting, Salt Lake City, UT, United States, March 22-26, 2009 2009, INOR.
35. Chen, T.; Xu, C.; Roeder, J. F.; Baum, T. H. U. S. Pat. Appl. Publ. 2009, 2008-13433; 2007-885459P, 13.
36. Wiedmann, M. K.; Karunarathne, M. C.; Baird, R. J.; Winter, C. H. Chem. Mater. 2010, 22, 4400
37. Blanquart, T.; Niinistö, J.; Heikkilä, M.; Sajavaara, T.; Kukli, K.; Puukilainen, E.; Xu, C.; Hunks, W.; Ritala, M.; Leskelä, M. â Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films †paper submitted to Chem. Mater.
38. Rahtu, A.; Ritala, M. Proc.-Electrochem. Soc. 2000, 2000-13, 105
39. Blanquart, T.; Longo, V.; Niinistö, J.; Heikkilä, M.; Kukli, K.; Ritala, M.; Leskelä, M. â High performance imido-amido precursor for atomic layer deposition of Ta2O5 †paper submitted to Semicond. Sci. Technol.
40. Pyykkoe, P.; Riedel, S.; Patzschke, M. Eur. J. Chem. 2005, 11, 3511
41. Sundberg, M.; Ponec, R. Inorg. Chem. Acta 2006, 359, 899
42. Knapas, K.; Ritala, M. Chem. Mater. 2008, 20, 5698
43. Rahtu, A.; Ritala, M. Appl. Phys. Lett. 2002, 80, 521