Processing of Y2O3 thin films by atomic layer deposition from cyclopentadienyl-type compounds and water as precursors

Chemistry of Materials

Volumn 16, Issue 15, 2004, Pages 2953-2958

  Niinistö, Jaakko ^a   Putkonen, Matti ^a   Niinistö, Lauri ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD); DEPOSITION TEMPERATURE;

ORGANOMETALLICS;

CARBON; CYCLOPENTADIENE DERIVATIVE; ORGANOMETALLIC COMPOUND; OXIDE; OXYGEN; SILICON; TRIS(CYCLOPENTADIENYL)YTTRIUM; TRIS(METHYLCYCLOPENTADIENYL)YTTRIUM; UNCLASSIFIED DRUG; WATER; YTTRIUM; YTTRIUM OXIDE;

ANALYTIC METHOD; ARTICLE; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; CHEMICAL COMPOSITION; CHEMICAL PROCEDURES; CRYSTAL STRUCTURE; CRYSTALLIZATION; FILM; HIGH TEMPERATURE; KINETICS; MORPHOLOGY; PRECURSOR; TIME OF FLIGHT ELASTIC RECOIL DETECTION ANALYSIS; X RAY DIFFRACTION;

EID: 3242672381     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm040145v     Document Type: Article

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