Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films

Microelectronics Reliability

Volumn 55, Issue 1, 2015, Pages 1-14

  Blasco, J ^a   Ghenzi, N ^b   Sune J ^a   Levy, P ^b   Miranda, E ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b DEPARTAMENTO DE FÍSICA   (Argentina)

Author keywords

Memristor; MIM; Oxide breakdown; Resistive switching; RRAM; TiO2

Indexed keywords

DIELECTRIC FILMS; EQUATIONS OF STATE; HYSTERESIS; MEMRISTORS; METAL INSULATOR BOUNDARIES; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

MEMRISTOR; MIM; OXIDE BREAKDOWN; RESISTIVE SWITCHING; RRAM; TIO;

MIM DEVICES;

EID: 84920546367     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2014.10.017     Document Type: Article

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